Abstract: A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.