Patents by Inventor Chao-Hung WAN
Chao-Hung WAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11735436Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 10, 2022Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20230260764Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Sheng-chun YANG, Po-Wei LIANG, Chao-Hung WAN, Yi-Ming LIN, Liu Che KANG
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Patent number: 11685994Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: GrantFiled: September 13, 2019Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Yi-Ming Lin, Chih-tsung Lee, Yun-Tzu Chiu, Chao-Hung Wan
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Patent number: 11670491Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: GrantFiled: July 15, 2020Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Po-Wei Liang, Chao-Hung Wan, Yi-Ming Lin, Liu Che Kang
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Publication number: 20230062038Abstract: A chamber of a semiconductor fabrication facility may include a vent port diffuser. The vent port diffuser may include a first tube member configured to couple the vent port diffuser to a vent port of the chamber. The vent port diffuser may include a second tube member coupled to the first tube member. The second tube member may comprise a plurality of openings spaced along a length of the second tube member, with the plurality of openings configured to receive a fluid from the chamber. Based on the semiconductor fabrication facility including the vent port diffuser, the chamber may be configured to provide an improved flow field of a fluid within the chamber. In this way, the vent port diffuser may reduce defects of semiconductor devices transported through the chamber that might otherwise be caused by contaminants.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Yung-Tsun LIU, Chao-Hung WAN, Kuang-Wei CHENG, Chih-Tsung LEE, Chyi-Tsong NI
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Publication number: 20220392782Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: ApplicationFiled: August 10, 2022Publication date: December 8, 2022Inventors: Chih-Tsung LEE, Sheng-chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220356574Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Sheng-chun YANG, Yi-Ming LIN, Chih-tsung LEE, Yun-Tzu CHIU, Chao-Hung WAN
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Patent number: 11443961Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 26, 2020Date of Patent: September 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220020573Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: ApplicationFiled: July 15, 2020Publication date: January 20, 2022Inventors: Sheng-chun YANG, Po-Wei LIANG, Chao-Hung WAN, Yi-Ming LIN, Liu Che KANG
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Patent number: 11183404Abstract: A diffuser for diffusing a gas includes a base portion and a head portion fluidly coupled to the base portion. The head portion includes a diffuser element configured to diffuse a first fraction of the gas through a circumference of the diffuser element and a second fraction of the gas through an end surface of the diffuser element. The head portion further includes a connecting structure having a first connecting portion configured to receive a portion of the diffuser element therein and a second connecting portion protruding outwardly from the first connecting portion and configured to couple to the base portion.Type: GrantFiled: April 26, 2019Date of Patent: November 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-chun Yang, Yi-Ming Lin, Chao-Hung Wan
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Publication number: 20210079524Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: ApplicationFiled: September 13, 2019Publication date: March 18, 2021Inventors: Sheng-chun YANG, Yi-Ming LIN, Chih-tsung LEE, Yun-Tzu CHIU, Chao-Hung WAN
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Publication number: 20210066096Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: ApplicationFiled: August 26, 2020Publication date: March 4, 2021Inventors: Chih-Tsung LEE, Sheng-Chun YANG, Yun-Tzu CHIU, Chao-Hung WAN, Yi-Ming LIN, Chyi-Tsong NI
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Patent number: 10879099Abstract: A humidity-controlled storage device includes a plurality of panels configured to form an enclosed volume. A first panel of the plurality of panels includes inlet and outlet ports. The storage device further includes a purge system with a gas inlet pipe, a gas supply system, and a gas extraction system. The gas inlet pipe includes a nozzle and a cylindrical portion coupled to the inlet port. The gas supply system is configured to supply a purge gas to the gas inlet pipe. The gas inlet pipe is configured to output the purge gas into the enclosed volume in a direction that creates a circular or an oval gas flow pattern within the enclosed volume. The gas extraction system is coupled to the outlet port and is configured to extract the purge gas from the enclosed volume.Type: GrantFiled: January 2, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-Chun Yang, Yi-Ming Lin, Chao-Hung Wan, Hsiu Hao Hsu, Guan Jung Chen, Po-Wei Liang
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Publication number: 20200135513Abstract: A diffuser for diffusing a gas includes a base portion and a head portion fluidly coupled to the base portion. The head portion includes a diffuser element configured to diffuse a first fraction of the gas through a circumference of the diffuser element and a second fraction of the gas through an end surface of the diffuser element. The head portion further includes a connecting structure having a first connecting portion configured to receive a portion of the diffuser element therein and a second connecting portion protruding outwardly from the first connecting portion and configured to couple to the base portion.Type: ApplicationFiled: April 26, 2019Publication date: April 30, 2020Inventors: Sheng-chun YANG, Yi-Ming LIN, Chao-Hung WAN
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Publication number: 20200058532Abstract: A humidity-controlled storage device includes a plurality of panels configured to form an enclosed volume. A first panel of the plurality of panels includes inlet and outlet ports. The storage device further includes a purge system with a gas inlet pipe, a gas supply system, and a gas extraction system. The gas inlet pipe includes a nozzle and a cylindrical portion coupled to the inlet port. The gas supply system is configured to supply a purge gas to the gas inlet pipe. The gas inlet pipe is configured to output the purge gas into the enclosed volume in a direction that creates a circular or an oval gas flow pattern within the enclosed volume. The gas extraction system is coupled to the outlet port and is configured to extract the purge gas from the enclosed volume.Type: ApplicationFiled: January 2, 2019Publication date: February 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Chao-Hung WAN, Hsiu Hao HSU, Guan Jung CHEN, Po-Wei LIANG