Patents by Inventor Chao-Jing Tang

Chao-Jing Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trigger and access circuitry for RAM to overcome instability of storage status and reduce power consumption
    Patent number: 10854281
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Grant
    Filed: August 11, 2019
    Date of Patent: December 1, 2020
    Inventor: Chao-Jing Tang
  • Access device and associated storage device for performing rewrite operation based on trigger level
    Patent number: 10699777
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: June 30, 2020
    Inventor: Chao-Jing Tang
  • RANDOM-ACCESS MEMORY AND ASSOCIATED CIRCUIT, METHOD AND DEVICE
    Publication number: 20190362779
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Application
    Filed: August 11, 2019
    Publication date: November 28, 2019
    Inventor: Chao-Jing Tang
  • 1T1D DRAM CELL AND ACCESS METHOD AND ASSOCIATED DEVICE FOR DRAM
    Publication number: 20190362778
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Inventor: Chao-Jing Tang
  • 1T1D DRAM cell and access method and associated device for DRAM
    Patent number: 10482951
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Grant
    Filed: September 4, 2017
    Date of Patent: November 19, 2019
    Inventor: Chao-Jing Tang
  • Random-Access Memory and Associated Circuit, Method and System
    Publication number: 20180114567
    Abstract: The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
    Type: Application
    Filed: September 4, 2017
    Publication date: April 26, 2018
    Inventor: Chao-Jing Tang