Patents by Inventor Chao-Jui Liang

Chao-Jui Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro-electromechanical device and manufacturing method thereof
    Patent number: 7989904
    Abstract: A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: August 2, 2011
    Assignee: Delta Electronics Inc.
    Inventors: Cheng-Chang Lee, Horng-Jou Wang, Zong-Ting Yuan, Chao-Jui Liang, Hsieh-Shen Hsieh, Huang-Kun Chen, Tai-Kang Shing
  • Capacitance sensing structure
    Patent number: 7884624
    Abstract: A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: February 8, 2011
    Assignee: Delta Electronics, Inc.
    Inventors: Horng-Jou Wang, Hsieh-Shen Hsieh, Chao-Jui Liang, Cheng-Chang Lee, Chao-Qing Wang, Zong-Ting Yuan, Huang-Kun Chen, Tai-Kang Shing
  • Semiconductor piezoresistive sensor and operation method thereof
    Patent number: 7448278
    Abstract: A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: November 11, 2008
    Assignee: Delta Electronics, Inc.
    Inventors: Hsieh-Shen Hsieh, Heng-Chung Chang, Cheng-Chang Lee, Chao-Jui Liang, Huang-Kun Chen, Tai-Kang Shing
  • MICRO-ELECTROMECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20080217787
    Abstract: A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.
    Type: Application
    Filed: January 18, 2008
    Publication date: September 11, 2008
    Inventors: Cheng-Chang LEE, Horng-Jou Wang, Zong-Ting Yuan, Chao-Jui Liang, Hsieh-Shen Hsieh, Huang-Kun Chen, Tai-Kang Shing
  • CAPACITANCE SENSING STRUCTURE
    Publication number: 20080150554
    Abstract: A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.
    Type: Application
    Filed: December 14, 2007
    Publication date: June 26, 2008
    Applicant: DELTA ELECTRONICS, INC.
    Inventors: Horng-Jou WANG, Hsieh-Shen Hsieh, Chao-Jui Liang, Cheng-Chang Lee, Chao-Qing Wang, Zong-Ting Yuan, Huang-Kun Chen, Tai-Kang Shing
  • Semiconductor piezoresistive sensor and operation method thereof
    Publication number: 20070148788
    Abstract: A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 28, 2007
    Applicant: DELTA ELECTRONICS, INC.
    Inventors: Hsieh-Shen Hsieh, Heng-Chung Chang, Cheng-Chang Lee, Chao-Jui Liang, Huang-Kun Chen, Tai-Kang Shing