Patents by Inventor Chao-Kun Hsieh

Chao-Kun Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240141480
    Abstract: Provided is a dual deposition chamber apparatus for producing silicon material, the apparatus including a furnace, a cooling jacket, a deposition device, and a vacuum extraction device. The cooling jacket communicates with the furnace, defines a space above the furnace, and includes an opening communicating with the space. The deposition device includes at least one first deposition substrate and at least one second deposition substrate. The at least one first deposition substrate and the at least one second deposition substrate are arranged side by side in the space, and respectively include a first inner wall surface and a second inner wall surface inclined downwards relative to a vertical axis. An uneven area is formed on the first inner wall surface and the second inner wall surface. The vacuum extraction device communicates with the opening of the cooling jacket.
    Type: Application
    Filed: November 2, 2022
    Publication date: May 2, 2024
    Inventors: Chung-Wen LAN, Wen-Yi CHIU, Chao-Kun HSIEH, Chao-Hsiang HSIEH
  • Patent number: 9080252
    Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: July 14, 2015
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Chung-Wen Lan, Ya-Lu Tsai, Sung-Lin Hsu, Chao-Kun Hsieh, Wen-Chieh Lan, Wen-Ching Hsu
  • Publication number: 20110303143
    Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.
    Type: Application
    Filed: April 29, 2011
    Publication date: December 15, 2011
    Applicant: Sino-American Silicon Products Inc.
    Inventors: Chung-Wen Lan, Ya-Lu Tsai, Sung-Lin Hsu, Chao-Kun Hsieh, Wen-Chieh Lan, Wen-Ching Hsu