Patents by Inventor Chaokun Lin

Chaokun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7180923
    Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: February 20, 2007
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: David Bour, Chaokun Lin, Michael Tan, Bill Perez
  • Patent number: 7142342
    Abstract: The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
    Type: Grant
    Filed: June 2, 2003
    Date of Patent: November 28, 2006
    Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
    Inventors: David P. Bour, Ashish Tandon, Scott W. Corzine, Chaokun Lin
  • Publication number: 20060180755
    Abstract: A sample support for a mass spectrometry system is described. The sample support comprises a substrate and a set of carbon nanotube regions adjacent to the substrate and configured to promote ionization of a sample on the sample support.
    Type: Application
    Filed: February 15, 2005
    Publication date: August 17, 2006
    Inventors: Ying-Lan Chang, Dan-Hui Yang, ChaoKun Lin, Jean Truche, Jian Bai
  • Patent number: 6920253
    Abstract: A modulator having a waveguide and a microdisk resonator is disclosed. The waveguide has an input port for receiving a light signal of wavelength ? and an output port for transmitting modulated light. The microdisk resonator has a resonance at ? and is coupled to the waveguide between the input and output ports such that at least 10 percent of the light traveling in the waveguide is coupled to the microdisk resonator. The microdisk resonator further includes a material having a first state and a second state, the material absorbing more of the light in the first state than in the second state. The first and second states are selectable by a signal that is applied to the microdisk resonator. In one embodiment, the waveguide and the microdisk resonator occupy different portions of a sheet of material having the various layers used to construct the resonator.
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: July 19, 2005
    Assignee: Agilent Technologies, Inc
    Inventors: Michael R. Tan, Scott W. Corzine, Mihail Sigalas, Chaokun Lin, Kostadin Djordjev
  • Publication number: 20050074194
    Abstract: A modulator having a waveguide and a microdisk resonator is disclosed. The waveguide has an input port for receiving a light signal of wavelength ? and an output port for transmitting modulated light. The microdisk resonator has a resonance at ? and is coupled to the waveguide between the input and output ports such that at least 10 percent of the light traveling in the waveguide is coupled to the microdisk resonator. The microdisk resonator further includes a material having a first state and a second state, the material absorbing more of the light in the first state than in the second state. The first and second states are selectable by a signal that is applied to the microdisk resonator. In one embodiment, the waveguide and the microdisk resonator occupy different portions of a sheet of material having the various layers used to construct the resonator.
    Type: Application
    Filed: October 2, 2003
    Publication date: April 7, 2005
    Inventors: Michael Tan, Scott Corzine, Mihail Sigalas, Chaokun Lin, Kostadin Djordjev
  • Publication number: 20040240025
    Abstract: The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
    Type: Application
    Filed: June 2, 2003
    Publication date: December 2, 2004
    Inventors: David P. Bour, Ashish Tandon, Scott W. Corzine, Chaokun Lin
  • Publication number: 20040161013
    Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
    Type: Application
    Filed: February 13, 2003
    Publication date: August 19, 2004
    Inventors: David Bour, Chaokun Lin, Michael Tan, Bill Perez