Patents by Inventor Chao-Li Shih
Chao-Li Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250112032Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: ApplicationFiled: December 13, 2024Publication date: April 3, 2025Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
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Patent number: 12198910Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: GrantFiled: November 17, 2023Date of Patent: January 14, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
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Publication number: 20240087861Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
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Patent number: 11854776Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: GrantFiled: July 28, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
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Patent number: 11768439Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: GrantFiled: August 16, 2021Date of Patent: September 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
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Publication number: 20220367160Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: ApplicationFiled: July 28, 2022Publication date: November 17, 2022Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
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Patent number: 11488814Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: GrantFiled: October 8, 2019Date of Patent: November 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
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Patent number: 11270950Abstract: An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.Type: GrantFiled: March 2, 2020Date of Patent: March 8, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Chen Liu, Cheng-Hao Yu, Cheng-Yi Huang, Chao-Li Shih, Chih-Shen Yang
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Publication number: 20210373442Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
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Publication number: 20210098390Abstract: An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.Type: ApplicationFiled: March 2, 2020Publication date: April 1, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yen-Chen Liu, Cheng-Hao Yu, Cheng-Yi Huang, Chao-Li Shih, Chih-Shen Yang
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Publication number: 20200161108Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: ApplicationFiled: October 8, 2019Publication date: May 21, 2020Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
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Patent number: 10163609Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: GrantFiled: March 31, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Min Lin, Ming-Hsing Li, Fang-Chi Chien, Chao-Li Shih, Hong-Hsing Chou
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Publication number: 20180174807Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.Type: ApplicationFiled: March 31, 2017Publication date: June 21, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Min LIN, Ming-Hsing LI, Fang-Chi CHIEN, Chao-Li SHIH, Hong-Hsing CHOU
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Publication number: 20180101101Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: ApplicationFiled: December 4, 2017Publication date: April 12, 2018Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang