Patents by Inventor Chao-Li Shih

Chao-Li Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087861
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
  • Patent number: 11854776
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
  • Patent number: 11768439
    Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
  • Publication number: 20220367160
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 17, 2022
    Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
  • Patent number: 11488814
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
  • Patent number: 11270950
    Abstract: An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Chen Liu, Cheng-Hao Yu, Cheng-Yi Huang, Chao-Li Shih, Chih-Shen Yang
  • Publication number: 20210373442
    Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.
    Type: Application
    Filed: August 16, 2021
    Publication date: December 2, 2021
    Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
  • Publication number: 20210098390
    Abstract: An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.
    Type: Application
    Filed: March 2, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Chen Liu, Cheng-Hao Yu, Cheng-Yi Huang, Chao-Li Shih, Chih-Shen Yang
  • Publication number: 20200161108
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Application
    Filed: October 8, 2019
    Publication date: May 21, 2020
    Inventors: Tsung-Jen YANG, Yi-Zhen CHEN, Chih-Pin WANG, Chao-Li SHIH, Ching-Hou SU, Cheng-Yi HUANG
  • Patent number: 10163609
    Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Min Lin, Ming-Hsing Li, Fang-Chi Chien, Chao-Li Shih, Hong-Hsing Chou
  • Publication number: 20180174807
    Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.
    Type: Application
    Filed: March 31, 2017
    Publication date: June 21, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Min LIN, Ming-Hsing LI, Fang-Chi CHIEN, Chao-Li SHIH, Hong-Hsing CHOU
  • Publication number: 20180101101
    Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.
    Type: Application
    Filed: December 4, 2017
    Publication date: April 12, 2018
    Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang