Patents by Inventor Chao-Liang Chang

Chao-Liang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240124844
    Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 18, 2024
    Inventors: Chia-Hsin Lee, Po-Cheng Lin, Yong-Cheng Kao, Ming-Hsi Chuang, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • Publication number: 20240115616
    Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 11, 2024
    Inventors: Po-Cheng Lin, Pi-Chun Huang, Zih-Han Hong, Ming-Hsi Chuang, Yi-Chun Lin, Chia-Hsin Lee, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • Publication number: 20240096893
    Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shih-Yao Lin, Chao-Cheng Chen, Chih-Han Lin, Ming-Ching Chang, Wei-Liang Lu, Kuei-Yu Kao
  • Publication number: 20230233613
    Abstract: The present invention provides a pharmaceutical composition for treating chronic stroke, involving injection via brain into the cranium of a patient having chronic stroke for six months or more; the pharmaceutical composition is a suspension at least comprising TS stem cells, an active synergistic component and a growth factor, wherein the expression level of CD34 and CD45 of the TS stem cells is 10% or less, and the expression level of CD90 and CD105 is 90% or more; the active synergistic component is an extracellular vesicle; the growth factor is at least one selected from the group consisting of HGF, G-CSF, Fractalkine, IP-10, EGF, IL-1?, IL-1?, IL-4, IL-5, IL-13, IFN?, TGF? and sCD40L. The present invention overcomes the limitations of previous cell therapy and provides a cell-based preparation that is clinically safe and therapeutically effective for chronic cerebral stroke.
    Type: Application
    Filed: October 11, 2022
    Publication date: July 27, 2023
    Inventors: Po-Cheng Lin, Pi-Chun Huang, Chia-Hsin Lee, Ming-Hsi Chuang, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang, Yi-Chun Lin, Yu-Chen Tsai, Peggy Leh Jiunn Wong, Ruei-Yue Liang
  • Patent number: 8088672
    Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: January 3, 2012
    Inventors: Tien-Hsi Lee, Ching-Han Huang, Chao-Liang Chang, Yao-Yu Yang
  • Publication number: 20110097873
    Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.
    Type: Application
    Filed: June 20, 2008
    Publication date: April 28, 2011
    Applicant: Tien-Hsi Lee
    Inventors: Tien-Hsi Lee, Ching-Han Huang, Chao-Liang Chang, Yao-Yu Yang
  • Publication number: 20050231303
    Abstract: A tunable passive device is disclosed. It includes a plurality of passive elements and at least a switch. The passive elements are stacked along the same direction, and connected with each other via the switch. By changing open/close conditions of the switch(es) and selecting specific passive elements that a current can pass, a responsive value of the tunable passive device is obtained.
    Type: Application
    Filed: July 29, 2004
    Publication date: October 20, 2005
    Inventors: Chao-Liang Chang, Chao-Ta Huang