Patents by Inventor Chao-Ming Hung

Chao-Ming Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6534424
    Abstract: In a method of forming silicon nitride on a substrate, a substrate is provided in a reaction chamber and a nitrogen-containing gas is introduced into the chamber so that a portion of the nitrogen-containing gas is chemically adsorbed on the substrate surface. Thereafter, the reaction chamber is pumped down to remove the nitrogen-containing gas. A silicon-containing gas is introduced into the reaction chamber to react with the adsorbed nitrogen-containing gas to form a silicon nitride layer on the substrate. Thereafter, the silicon-containing gas may be removed and the cycle repeated to deposit additional silicon nitride layers on the substrate.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: March 18, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Tzy-Tzan Fu, Hung-Chuan Chen, Chao-Ming Hung
  • Publication number: 20020086541
    Abstract: In a method of forming silicon nitride on a substrate, a substrate is provided in a reaction chamber and a nitrogen-containing gas is introduced into the chamber so that a portion of the nitrogen-containing gas is chemically adsorbed on the substrate surface. Thereafter, the reaction chamber is pumped down to remove the nitrogen-containing gas. A silicon-containing gas is introduced into the reaction chamber to react with the adsorbed nitrogen-containing gas to form a silicon nitride layer on the substrate. Thereafter, the silicon-containing gas may be removed and the cycle repeated to deposit additional silicon nitride layers on the substrate.
    Type: Application
    Filed: August 21, 2001
    Publication date: July 4, 2002
    Inventors: Tzy-Tzan Fu, Hung-Chuan Chen, Chao-Ming Hung