Patents by Inventor Chao-Nien Huang
Chao-Nien Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11937405Abstract: A system includes a rack of servers and a fluid circuit for cooling the rack of servers. The fluid circuit includes one or more cooling modules, a heat-exchanging module, and a pump. The one or more cooling modules are thermally connected to a conduit for flowing a coolant therethrough. Each cooling module includes a heat-exchanger thermally connected to the conduit and a chiller fluidly coupled to the heat-exchanger. The heat-exchanging module is fluidly connected to an outlet of the conduit. The pump is configured to drive the coolant from the heat-exchanging module to each server in the rack of servers.Type: GrantFiled: July 28, 2021Date of Patent: March 19, 2024Assignee: QUANTA COMPUTER INC.Inventors: Chao-Jung Chen, Yu Nien Huang, Sin-Hong Lien, Jen-Mao Chen
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Patent number: 11927202Abstract: A fan guard for a fan container includes a housing and a plurality of wings. The housing has a hollow interior defined by a cylindrical inner surface. The housing extends longitudinally between a first housing end and a second housing end. The plurality of wings is positioned within the hollow interior of the housing. Each wing of the plurality of wings extends radially, from a center of symmetry of the cylindrical inner surface to the cylindrical inner surface. Each wing of the plurality of wings is radially curved between the first housing end and the second housing end.Type: GrantFiled: August 5, 2020Date of Patent: March 12, 2024Assignee: QUANTA COMPUTER INC.Inventors: Chao-Jung Chen, Yu-Nien Huang, Herman Tan
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Patent number: 11921552Abstract: A computer chassis includes walls defining an airspace containing heat-generating components (e.g., storage drives). The airspace is divided into first and second regions, such as by a printed circuit board supporting the heat-generating components within the first region. An air input feeds both the first region and second region. Input air going through the first region first passes by a forward set of heat-generating components before continuing to a rearward set of heat-generating components to extract heat therefrom. Input air going through the second region bypasses the forward set of heat-generating components before being directed out through an air opening partway down the length of the chassis, after which this air passes by a rearward set of heat-generating components to extract heat.Type: GrantFiled: May 26, 2022Date of Patent: March 5, 2024Assignee: QUANTA COMPUTER INC.Inventors: Chao-Jung Chen, Yu-Nien Huang, Jen-Hui Wang
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Publication number: 20150123151Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.Type: ApplicationFiled: January 12, 2015Publication date: May 7, 2015Inventors: Min-Hsun HSIEH, Kuen-Ru CHUANG, Shu-Wen SUNG, Chia-Cheng LIU, Chao-Nien HUANG, Shane-Shyan WEY, Chih-Chiang LU, Ming-Jiunn JOU
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Patent number: 8932885Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: GrantFiled: December 28, 2012Date of Patent: January 13, 2015Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou
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Patent number: 8344353Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: GrantFiled: May 24, 2011Date of Patent: January 1, 2013Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou
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Publication number: 20110220873Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: ApplicationFiled: May 24, 2011Publication date: September 15, 2011Applicant: Epistar CorporationInventors: Min-Hsun Hsieh, Keun-Ru Chuang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang
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Patent number: 7061110Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: GrantFiled: September 1, 1999Date of Patent: June 13, 2006Assignee: Industrial Technology Research InstituteInventors: Jin-Kuo Ho, Charng-Shyang Jong, Chao-Nien Huang, Chin-Yuan Chen, Chienchia Chiu, Chenn-shiung Cheng, Kwang Kuo Shih
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Patent number: 6972208Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: GrantFiled: May 21, 2004Date of Patent: December 6, 2005Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Keun-Ru Chuang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang
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Patent number: 6936860Abstract: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.Type: GrantFiled: May 16, 2002Date of Patent: August 30, 2005Assignee: Epistar CorporationInventors: Shu-Wen Sung, Chin-Fu Ku, Chia-Cheng Liu, Min-Hsun Hsieh, Chao-Nien Huang, Chen Ou, Chuan-Ming Chang
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Patent number: 6867426Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: GrantFiled: March 6, 2002Date of Patent: March 15, 2005Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Keun-Ru Chuang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang
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Publication number: 20040197981Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: ApplicationFiled: May 21, 2004Publication date: October 7, 2004Inventors: Min-Hsun Hsieh, Keun-Ru Chuang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang
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Publication number: 20030003613Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: ApplicationFiled: March 6, 2002Publication date: January 2, 2003Inventors: Min-Hsun Hsieh, Keun-Ru Chuang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang
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Publication number: 20020185732Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: ApplicationFiled: September 1, 1999Publication date: December 12, 2002Inventors: JIN-KUO HO, CHARNG-SHYANG JONG, CHAO-NIEN HUANG, CHIN-YUAN CHEN, CHIENCHIA CHIU, CHENN-SHIUNG CHENG, KWANG KUO SHIH
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Publication number: 20020179918Abstract: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.Type: ApplicationFiled: May 16, 2002Publication date: December 5, 2002Inventors: Shu-Wen Sung, Chin-Fu Ku, Chia-Cheng Liu, Min-Hsun Hsieh, Chao-Nien Huang
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Patent number: 6319808Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: GrantFiled: June 3, 1999Date of Patent: November 20, 2001Assignee: Industrial TechnologyResearch InstituteInventors: Jin-Kuo Ho, Charng-Shyang Jong, Chao-Nien Huang, Chin-Yuan Chen, Chienchia Chiu, Chenn-shiung Cheng, Kwang Kuo Shih
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Patent number: 6190508Abstract: A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.Type: GrantFiled: April 7, 1999Date of Patent: February 20, 2001Assignee: Industrial Technology Research InstituteInventors: Lung-Han Peng, Yi-Chien Hsu, Chin-Yuan Chen, Jin-Kuo Ho, Chao-Nien Huang
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Patent number: 6163038Abstract: A white light-emitting diode and a method of fabricating the same diode are disclosed. The white light-emitting diode is fabricated by epitaxy, which can produce two peaks in the spectrum at the P-N junction by appropriately adjusting epitaxial parameters such as temperature, pressure, NH.sub.3 flux and the ratio of H.sub.2 to N.sub.2 or the concentration of dopant, such as Mg or Si. The diode can thus radiate white light by adjusting the wavelength and the intensity of the principal peak in the two peaks. Further, quantum well structure can be formed in the diode. By appropriately adjusting the epitaxial parameters, the spectrum of the quantum well structures may have more than one peak. Therefore, white light can be generated by combining the light with wavelengths at two or three different peaks. The white LED can radiate white light itself and need not involve combining many LEDs, so that the cost and the difficulty of fabricating the white LED lamp can be reduced.Type: GrantFiled: May 14, 1998Date of Patent: December 19, 2000Assignee: Industrial Technology Research InstituteInventors: Chin-Yuan Chen, Chao-Nien Huang, Fei-Chang Hwang, Ming-Huang Hong, Eric G. Lean
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Patent number: 5874320Abstract: A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C.Type: GrantFiled: July 11, 1997Date of Patent: February 23, 1999Assignee: Industrial Technology Research InstituteInventors: Kwang-Kuo Shih, Chao-Nien Huang, Chin-Yuan Chen, Biing-Jye Lee, Ming-Huang Hong
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Patent number: RE42422Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.Type: GrantFiled: March 15, 2007Date of Patent: June 7, 2011Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou