Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package with an anti-stiction layer, and an associated method of formation. In some embodiments, the MEMS package comprises a device substrate and a CMOS substrate. The device substrate comprises a MEMS device having a moveable or flexible part that is movable or flexible with respect to the device substrate. A surface of the moveable or flexible part is coated by a conformal anti-stiction layer made of polycrystalline silicon. A method for manufacturing the MEMS package is also provided.

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package with an anti-stiction layer, and an associated method of formation. In some embodiments, the MEMS package comprises a device substrate and a CMOS substrate. The device substrate comprises a MEMS device having a moveable or flexible part that is movable or flexible with respect to the device substrate. A surface of the moveable or flexible part is coated by a conformal anti-stiction layer made of polycrystalline silicon. A method for manufacturing the MEMS package is also provided.

Abstract: A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.

Abstract: A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.