Patents by Inventor Chao-Shun Yang
Chao-Shun Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230339564Abstract: A bicycle frame set includes a front fork, a head tube, a main tube, a seat tube, and a seat stay. The front fork includes a right fork leg and a left fork leg, the right fork leg being substantially parallel to the left fork leg. The front fork is rotatably coupled to the head tube. The main tube is connected to the head tube. The seat tube is connected to the main tube, the seat tube being configured to be connected to a seat post. The seat stay is extending from the seat tube.Type: ApplicationFiled: April 21, 2023Publication date: October 26, 2023Applicant: GIANT MANUFACTURING CO., LTD.Inventors: Chao-Shun YANG, Jing-Ru SHIH
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Publication number: 20230339563Abstract: A bicycle frame set includes a front fork, a head tube, a main tube, a seat tube, and a seat stay. The front fork includes a right fork leg and a left fork leg. The front fork is rotatably coupled to the head tube. The main tube is connected to the head tube. The seat tube is connected to the main tube, the seat tube being configured to connect to a seat post. The seat stay includes a first portion connected to the seat tube at a front end of the first portion of the seat stay. When a rear wheel and a front wheel are mounted to the bicycle frame set, the first portion of the seat stay extends in a horizontal direction substantially parallel with respect to a ground plane supporting the rear wheel and the front wheel.Type: ApplicationFiled: April 21, 2023Publication date: October 26, 2023Applicant: GIANT MANUFACTURING CO., LTD.Inventors: Chao-Shun YANG, Jing-Ru SHIH
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Patent number: 11757344Abstract: The present disclosure provides a conversion circuit including a power supply module, positive and negative input terminals, positive and negative output terminals, a switch, an inductor, input and output capacitors, and a controller. The power supply module converts an AC power for providing three potentials on three power supply terminals respectively. The potential on the first power supply terminal is higher than the potential on the second power supply terminal, which is higher than the potential on the third power supply terminal. The positive and negative input terminals are electrically connected to the first and third power supply terminals respectively, and a voltage therebetween is an input voltage. The negative output terminal is electrically connected to the third power supply terminal. The controller is electrically connected to the positive input terminal, the second power supply terminal and the switch. A voltage across the controller is lower than the input voltage.Type: GrantFiled: March 24, 2022Date of Patent: September 12, 2023Assignee: DELTA ELECTRONICS, INC.Inventors: Chien-Jen Chen, Chao-Shun Yang, Cheng-Hsun Chang
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Publication number: 20230231463Abstract: The present disclosure provides a conversion circuit including a power supply module, positive and negative input terminals, positive and negative output terminals, a switch, an inductor, input and output capacitors, and a controller. The power supply module converts an AC power for providing three potentials on three power supply terminals respectively. The potential on the first power supply terminal is higher than the potential on the second power supply terminal, which is higher than the potential on the third power supply terminal. The positive and negative input terminals are electrically connected to the first and third power supply terminals respectively, and a voltage therebetween is an input voltage. The negative output terminal is electrically connected to the third power supply terminal. The controller is electrically connected to the positive input terminal, the second power supply terminal and the switch. A voltage across the controller is lower than the input voltage.Type: ApplicationFiled: March 24, 2022Publication date: July 20, 2023Inventors: Chien-Jen Chen, Chao-Shun Yang, Cheng-Hsun Chang
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Patent number: 10752315Abstract: A shock absorption device includes first and second assemblies, at least one pivot component and a buffering component. The first assembly is adapted to be connected to a first component of a bicycle and has at least one conical hole. The second assembly is adapted to be connected to a second component of the bicycle. The pivot component is fastened on the second assembly and has a conical portion. The conical portion is inserted into the conical hole such that the first and second assemblies are pivoted to each other. The conical portion is leaned against and fitted on the conical hole. The buffering component is disposed between the first and second assemblies. When the first and second assemblies rotate relatively to each other by taking a central axis of the conical hole as a rotation axis, force between the first and second assemblies is buffered by the buffering component.Type: GrantFiled: July 4, 2019Date of Patent: August 25, 2020Assignee: Giant Manufacturing Co., Ltd.Inventors: Wei-Teng Chiang, Chao-Shun Yang, Chia-Wei Lin
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Patent number: 10647382Abstract: A charge system and a charge method adapted to a bicycle are provided. The charge system includes a hub dynamo, a power apparatus, a sensor and a control apparatus. The control apparatus is coupled to the hub dynamo, the power apparatus and the sensor. The sensor is adapted to sense a riding condition of the bicycle. According to the riding condition, the control apparatus selects a power supply pattern of the hub dynamo. When the power supply pattern is selected to be a stop pattern, a connection loop between the hub dynamo and the power apparatus is turned off by the control apparatus. When the power supply pattern is selected to a first pattern, the connection loop between the hub dynamo and the power apparatus is turned on by the control apparatus, such that the hub dynamo supplies power to the power apparatus at a first rate.Type: GrantFiled: December 23, 2016Date of Patent: May 12, 2020Assignee: Giant Manufacturing Co., Ltd.Inventors: Wei-Chieh Ho, Chia-Wei Lin, Chao-Shun Yang
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Publication number: 20200017160Abstract: A shock absorption device includes first and second assemblies, at least one pivot component and a buffering component. The first assembly is adapted to be connected to a first component of a bicycle and has at least one conical hole. The second assembly is adapted to be connected to a second component of the bicycle. The pivot component is fastened on the second assembly and has a conical portion. The conical portion is inserted into the conical hole such that the first and second assemblies are pivoted to each other. The conical portion is leaned against and fitted on the conical hole. The buffering component is disposed between the first and second assemblies. When the first and second assemblies rotate relatively to each other by taking a central axis of the conical hole as a rotation axis, force between the first and second assemblies is buffered by the buffering component.Type: ApplicationFiled: July 4, 2019Publication date: January 16, 2020Applicant: Giant Manufacturing Co., Ltd.Inventors: Wei-Teng Chiang, Chao-Shun Yang, Chia-Wei Lin
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Publication number: 20170341706Abstract: A charge system and a charge method adapted to a bicycle are provided. The charge system includes a hub dynamo, a power apparatus, a sensor and a control apparatus. The control apparatus is coupled to the hub dynamo, the power apparatus and the sensor. The sensor is adapted to sense a riding condition of the bicycle. According to the riding condition, the control apparatus selects a power supply pattern of the hub dynamo. When the power supply pattern is selected to be a stop pattern, a connection loop between the hub dynamo and the power apparatus is turned off by the control apparatus. When the power supply pattern is selected to a first pattern, the connection loop between the hub dynamo and the power apparatus is turned on by the control apparatus, such that the hub dynamo supplies power to the power apparatus at a first rate.Type: ApplicationFiled: December 23, 2016Publication date: November 30, 2017Applicant: Giant Manufacturing Co., Ltd.Inventors: Wei-Chieh Ho, Chia-Wei Lin, Chao-Shun Yang
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Publication number: 20160380109Abstract: A method for fabricating a transistor including the following steps is provided. First, a gate electrode is formed on a substrate, and a gate insulating layer is formed on the substrate in sequence, wherein the gate insulating layer covers the substrate and the gate electrode. Next, a patterned channel layer and a hard-mask layer are formed on the gate insulating layer, wherein the patterned channel layer and the hard-mask layer are located above the gate electrode, and the hard-mask layer is disposed on the patterned channel layer. Afterwards, a source and a drain are formed on the gate insulating layer by a wet etchant. The part of the hard-mask layer that is not covered by the source and the drain is removed by the wet etchant until the patterned channel layer is exposed, so as to form a plurality of patterned hard-mask layers.Type: ApplicationFiled: September 13, 2016Publication date: December 29, 2016Applicant: Au Optronics CorporationInventor: Chao-Shun Yang
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Patent number: 9484441Abstract: A method for fabricating a transistor including the following steps is provided. First, a gate electrode is formed on a substrate, and a gate insulating layer is formed on the substrate in sequence, wherein the gate insulating layer covers the substrate and the gate electrode. Next, a patterned channel layer and a hard-mask layer are formed on the gate insulating layer, wherein the patterned channel layer and the hard-mask layer are located above the gate electrode, and the hard-mask layer is disposed on the patterned channel layer. Afterwards, a source and a drain are formed on the gate insulating layer by a wet etchant. The part of the hard-mask layer that is not covered by the source and the drain is removed by the wet etchant until the patterned channel layer is exposed, so as to form a plurality of patterned hard-mask layers.Type: GrantFiled: April 27, 2014Date of Patent: November 1, 2016Assignee: Au Optronics CorporationInventor: Chao-Shun Yang
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Publication number: 20150200281Abstract: A method for fabricating a transistor including the following steps is provided. First, a gate electrode is formed on a substrate, and a gate insulating layer is formed on the substrate in sequence, wherein the gate insulating layer covers the substrate and the gate electrode. Next, a patterned channel layer and a hard-mask layer are formed on the gate insulating layer, wherein the patterned channel layer and the hard-mask layer are located above the gate electrode, and the hard-mask layer is disposed on the patterned channel layer. Afterwards, a source and a drain are formed on the gate insulating layer by a wet etchant. The part of the hard-mask layer that is not covered by the source and the drain is removed by the wet etchant until the patterned channel layer is exposed, so as to form a plurality of patterned hard-mask layers.Type: ApplicationFiled: April 27, 2014Publication date: July 16, 2015Applicant: Au Optronics CorporationInventor: Chao-Shun Yang
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Patent number: 8765506Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.Type: GrantFiled: July 22, 2013Date of Patent: July 1, 2014Assignee: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Patent number: 8759832Abstract: A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.Type: GrantFiled: March 19, 2012Date of Patent: June 24, 2014Assignee: AU Optronics Corp.Inventors: Chao-Shun Yang, Hsing-Hung Hsieh
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Patent number: 8723190Abstract: A light emitting device is provided. A light emitting device that includes a substrate, a first electrode, a passivation layer, a second electrode, and a light emitting layer is provided. The first electrode is disposed on the substrate and includes a first patterned conductive layer. The first patterned conductive layer includes an alloy containing a first metal and a second metal. The passivation layer is at least disposed on a side surface of the first electrode and includes a compound of the second metal. Here, a work function of the compound of the second metal ranges from about 4.8 to about 5.5. The second electrode is disposed on the first electrode. The light emitting layer is disposed between the first electrode and the second electrode.Type: GrantFiled: July 22, 2013Date of Patent: May 13, 2014Assignee: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Publication number: 20130309787Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.Type: ApplicationFiled: July 22, 2013Publication date: November 21, 2013Applicant: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Publication number: 20130299870Abstract: A light emitting device is provided. A light emitting device that includes a substrate, a first electrode, a passivation layer, a second electrode, and a light emitting layer is provided. The first electrode is disposed on the substrate and includes a first patterned conductive layer. The first patterned conductive layer includes an alloy containing a first metal and a second metal. The passivation layer is at least disposed on a side surface of the first electrode and includes a compound of the second metal. Here, a work function of the compound of the second metal ranges from about 4.8 to about 5.5. The second electrode is disposed on the first electrode. The light emitting layer is disposed between the first electrode and the second electrode.Type: ApplicationFiled: July 22, 2013Publication date: November 14, 2013Applicant: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Patent number: 8563989Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.Type: GrantFiled: February 23, 2012Date of Patent: October 22, 2013Assignee: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Patent number: 8534846Abstract: A projection apparatus and a method for adjusting a driving voltage of the projection apparatus are provided. The projection apparatus comprises an illuminant module, an output voltage control module, an illuminant driver module, and an illuminant driver management module. The output voltage control module is configured to output a driving voltage. The illuminant driver module is configured to output an illuminant voltage to the illuminant module after receiving the driving voltage. The illuminant driver management module is configured to receive the illuminant voltage and to detect a variation in the illuminant voltage. Then, the illuminant driver management module outputs a control signal to the output voltage control module according to the variation of the illuminant voltage. Finally, the output voltage control module adjusts the driving voltage according to the control signal.Type: GrantFiled: May 26, 2010Date of Patent: September 17, 2013Assignee: Delta Electronics, Inc.Inventors: Yao-Hsien Huang, Chao-Shun Yang
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Publication number: 20130153949Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.Type: ApplicationFiled: February 23, 2012Publication date: June 20, 2013Applicant: Au Optronics CorporationInventors: Chao-Shun Yang, Chen-Ming Hu
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Patent number: D1008106Type: GrantFiled: April 22, 2022Date of Patent: December 19, 2023Assignee: GIANT MANUFACTURING CO., LTD.Inventors: Chao-Shun Yang, Jing-Ru Shih