Patents by Inventor Chao-Sung Lin

Chao-Sung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9580814
    Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese, magnesium and oxygen, and a manganese content of the first protecting layer is between 10 at. % to 20 at. %.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: February 28, 2017
    Assignee: National Taiwan University
    Inventors: Shun-Yi Jian, Kao-Feng Lin, Yu-Ren Chu, Chao-Sung Lin
  • Patent number: 9486984
    Abstract: Provided is a steel sheet including an iron-based material, a first coating layer disposed on the iron-based material, and a second coating layer disposed on the first coating layer, wherein the first coating layer includes a zinc alloy and the second coating layer consists essentially of chromium and carbon.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: November 8, 2016
    Assignees: National Taiwan University, CHINA STEEL CORPORATION
    Inventors: Chao-Sung Lin, Tsung-Jung Chen, Chun-Hung Wu
  • Publication number: 20150314569
    Abstract: Provided is a steel sheet including an. iron-based material, a first coating layer disposed on the iron-based material, and a second coating layer disposed on the first coating layer, wherein the first coating layer includes a zinc alloy and the second coating layer consists essentially of chromium and carbon.
    Type: Application
    Filed: May 5, 2015
    Publication date: November 5, 2015
    Inventors: Chao-Sung Lin, Tsung-Jung Chen, Chun-Hung Wu
  • Publication number: 20150191826
    Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese, magnesium and oxygen, and a manganese content of the first protecting layer is between 10 at. % to 20 at. %.
    Type: Application
    Filed: March 5, 2014
    Publication date: July 9, 2015
    Applicant: National Taiwan University
    Inventors: Shun-Yi Jian, Kao-Feng Lin, Yu-Ren Chu, Chao-Sung Lin
  • Publication number: 20140110768
    Abstract: A transistor device includes a semiconductor substrate, a gate structure, and first and second metal layers. The semiconductor substrate includes a substrate body having a plurality of drain and source regions alternately arranged in a checkerboard pattern and spaced apart from each other. The first metal layer is disposed on the substrate body and includes a plurality of first pattern elements and a first patterned region. The second metal layer is disposed on top of the first metal layer and has a plurality of second pattern elements and a second patterned region.
    Type: Application
    Filed: July 9, 2013
    Publication date: April 24, 2014
    Inventor: Chao-Sung Lin
  • Publication number: 20140111259
    Abstract: A power-on reset circuit includes a power confirmation module and a reset signal generator. The power confirmation module receives a supply voltage and generates a reference voltage and a comparison voltage. A magnitude of the reference voltage rises a first time delay after receipt of the supply voltage, and a magnitude of the comparison voltage rises a second time delay after receipt of the supply voltage. The second time delay is greater than the first time delay. The power confirmation module further outputs a confirmation signal based on the reference voltage and the comparison voltage. The reset signal generator outputs a reset signal according to the confirmation signal.
    Type: Application
    Filed: May 14, 2013
    Publication date: April 24, 2014
    Applicant: KEYSTONE SEMICONDUCTOR CORP.
    Inventor: Chao-Sung Lin