Abstract: A copper foil structure and a manufacturing method thereof are provided. In some embodiments, the copper foil structure includes a copper foil layer and a conductive organic anti-oxidation layer. The conductive organic anti-oxidation layer is disposed on the copper foil layer, and the conductive organic anti-oxidation layer includes an organic antioxidant and a conductive polymer.

Abstract: A polyvinyl chloride synthetic leather without a foaming structure and a method for producing the same are provided. The polyvinyl chloride synthetic leather includes a base fabric layer and a top fabric layer. The top fabric layer is formed of a fabric composition that includes a polyvinyl chloride resin and a polymer plasticizer. The polymer plasticizer is formed from a dibasic acid raw material and a diol raw material through a polycondensation reaction, and is end-capped by an end-capped fatty acid. A chemical structure of the end-capped fatty acid has a long carbon chain (C8 to C22). An end of the long carbon chain has a carboxyl group, and another end thereof does not have any carboxyl group. A residual amount of the diol raw material in the polymer plasticizer is less than 300 ppm. An acid value of the polymer plasticizer is less than 1 mg KOH/g.

Abstract: A polyvinyl chloride artificial leather without a foaming structure is provided. The polyvinyl chloride artificial leather includes a base fabric layer and a top fabric layer directly formed on the base fabric layer. The top fabric layer has a solid structure extendedly formed from one surface of the top fabric layer to the base fabric layer, and the solid structure is formed by a fabric composition. The solid structure has a predetermined thickness. The fabric composition includes 40 to 70 parts by weight of a polyvinyl chloride resin and 30 to 60 parts by weight of a polymer plasticizer. A weight average molecular weight of the polymer plasticizer is within a range from 1,500 to 6,000, a molecular structure of the polymer plasticizer has at least one soft segment that is in a linear shape, and the at least one soft segment has an ether group.

Abstract: Manufacturing methods of silicon nanoparticles for batteries and silicon-doped electrode material, wherein the manufacturing method of silicon nanoparticles for batteries includes the following steps. A dispersant is mixed with a solvent to form a dispersion liquid. Then, the dispersion liquid, a grinding medium and a silicon raw material are added into a grinder. A grinding process is performed to form silicon nanoparticles with an average particle size of less than 200 nm. Next, a silicon dispersion liquid containing the silicon nanoparticles is taken out. Afterward, alkali solution is added into the silicon dispersion liquid to form silicon nanoparticles for batteries, wherein surface layers of the silicon nanoparticles for batteries each is a silicon oxide layer.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A method for smoothing surfaces of a copper foil and the copper foil obtained are provided, wherein the method for smoothing surfaces of the copper foil includes the following steps. Supplied with a copper foil. A first electropolishing process is performed on the copper foil. The copper foil is subjected to a pickling process. A second electropolishing process is performed on the copper foil.

Abstract: A copper foil structure and a manufacturing method thereof are provided. In some embodiments, the copper foil structure includes a copper foil layer and a conductive organic anti-oxidation layer. The conductive organic anti-oxidation layer is disposed on the copper foil layer, and the conductive organic anti-oxidation layer includes an organic antioxidant and a conductive polymer.

Abstract: A circuit board cleaning system includes a cleaning tank, an ion exchange resin column, and a pump unit. The cleaning tank accommodates a cleaning liquid and allows a circuit board to be immersed in the cleaning liquid. The cleaning liquid includes a liquid water and a hydrocarbon-based surfactant. An ion exchange resin filled in the ion exchange resin column is a basic ion exchange resin. The pump unit is configured to pump the cleaning liquid into the ion exchange resin column, and enable the cleaning liquid to pass through the ion exchange resin column. When the cleaning liquid passes through the ion exchange resin column, the basic ion exchange resin deprotonates the hydrocarbon-based surfactant. After the cleaning liquid passes through the ion exchange resin column, the cleaning liquid is returned to the cleaning tank to remove acidic residue remaining on a surface of the circuit board.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A plasticizer and a method for manufacturing the plasticizer are provided. The method for manufacturing the plasticizer includes steps as follows: mixing a dicarboxylic acid, a diol, and a catalyst to form a reactant mixture; reacting the reactant mixture at a temperature ranging from 130° C. to 220° C. so as to form a semi-product; adding an endcapping alcohol into the semi-product at a temperature ranging from 205° C. to 220° C. so as to form a coarse plasticizer; purifying the coarse plasticizer under a pressure ranging from 760 Torr to 5 Torr so as to obtain the plasticizer. The dicarboxylic acid includes adipic acid. The diol includes a polyglycol and a saturated fatty alcohol. The endcapping alcohol includes isooctyl alcohol, isodecyl alcohol, or 2-propylheptanol. The dicarboxylic acid, the diol, and the endcapping alcohol have a molar ratio ranging from 1:0.6 to 0.9:0.3 to 0.6.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A polyvinyl chloride artificial leather without a foaming structure is provided. The polyvinyl chloride artificial leather includes a base fabric layer and a top fabric layer directly formed on the base fabric layer. The top fabric layer has a solid structure extendedly formed from one surface of the top fabric layer to the base fabric layer, and the solid structure is formed by a fabric composition. The solid structure has a predetermined thickness. The fabric composition includes 40 to 70 parts by weight of a polyvinyl chloride resin and 30 to 60 parts by weight of a polymer plasticizer. A weight average molecular weight of the polymer plasticizer is within a range from 1,500 to 6,000, a molecular structure of the polymer plasticizer has at least one soft segment that is in a linear shape, and the at least one soft segment has an ether group.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A method for inspecting a wafer includes: transferring the wafer from a transfer chamber to an annealing station by a robot arm; and monitoring at least one portion of an edge bevel removal area of the wafer over the robot arm when the wafer is transferred from the transfer chamber to the annealing station. The at least one portion of the edge bevel removal area includes a first portion and a second portion different from the first portion. When the wafer is passing through a predetermined location between the transfer chamber and the annealing station, a first charge-coupled device sensor located over the first portion of the edge bevel removal area is used to capture an image of the first portion, and a second charge-coupled device sensor located over the second portion of the edge bevel removal area is used to capture an image of the second portion.

Abstract: A method for inspecting a wafer includes: transferring the wafer from a transfer chamber to an annealing station by a robot arm; and monitoring at least one portion of an edge bevel removal area of the wafer over the robot arm when the wafer is transferred from the transfer chamber to the annealing station. The at least one portion of the edge bevel removal area includes a first portion and a second portion different from the first portion. When the wafer is passing through a predetermined location between the transfer chamber and the annealing station, a first charge-coupled device sensor located over the first portion of the edge bevel removal area is used to capture an image of the first portion, and a second charge-coupled device sensor located over the second portion of the edge bevel removal area is used to capture an image of the second portion.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, and an edge detector. The transfer chamber is configured to interface with an electroplating apparatus. The annealing station is arranged to anneal a wafer. The robot arm is arranged to transfer the wafer from the transfer chamber to the annealing station. The edge detector is disposed over the robot arm for the purpose of monitoring at least one portion of an edge bevel removal area of the wafer carried by the robot arm.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, and an edge detector. The transfer chamber is configured to interface with an electroplating apparatus. The annealing station is arranged to anneal a wafer. The robot arm is arranged to transfer the wafer from the transfer chamber to the annealing station. The edge detector is disposed over the robot arm for the purpose of monitoring at least one portion of an edge bevel removal area of the wafer carried by the robot arm.