Abstract: A method of controlling movement of an autonomous mobile apparatus including a driving module, a processor, and a positioning module includes steps of: the processor moving the autonomous mobile apparatus at a default speed from a first location toward a second location along a straight path; the positioning module obtaining data related to a current location; when the processor determines that a distance between the current location and the second location is greater than a predetermined distance, the processor obtaining a deviating direction and a minimum distance of the current location relative to the straight path; the processor setting a movement speed and an angular velocity based on the deviating direction, a tolerant distance, the minimum distance, and the default speed; and the processor controlling the driving apparatus to move the autonomous mobile apparatus at the movement speed and turning the autonomous mobile apparatus at the angular velocity.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A plasticizer and a method for manufacturing the plasticizer are provided. The method for manufacturing the plasticizer includes steps as follows: mixing a dicarboxylic acid, a diol, and a catalyst to form a reactant mixture; reacting the reactant mixture at a temperature ranging from 130° C. to 220° C. so as to form a semi-product; adding an endcapping alcohol into the semi-product at a temperature ranging from 205° C. to 220° C. so as to form a coarse plasticizer; purifying the coarse plasticizer under a pressure ranging from 760 Torr to 5 Torr so as to obtain the plasticizer. The dicarboxylic acid includes adipic acid. The diol includes a polyglycol and a saturated fatty alcohol. The endcapping alcohol includes isooctyl alcohol, isodecyl alcohol, or 2-propylheptanol. The dicarboxylic acid, the diol, and the endcapping alcohol have a molar ratio ranging from 1:0.6 to 0.9:0.3 to 0.6.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A polyvinyl chloride artificial leather without a foaming structure is provided. The polyvinyl chloride artificial leather includes a base fabric layer and a top fabric layer directly formed on the base fabric layer. The top fabric layer has a solid structure extendedly formed from one surface of the top fabric layer to the base fabric layer, and the solid structure is formed by a fabric composition. The solid structure has a predetermined thickness. The fabric composition includes 40 to 70 parts by weight of a polyvinyl chloride resin and 30 to 60 parts by weight of a polymer plasticizer. A weight average molecular weight of the polymer plasticizer is within a range from 1,500 to 6,000, a molecular structure of the polymer plasticizer has at least one soft segment that is in a linear shape, and the at least one soft segment has an ether group.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.

Abstract: A method for inspecting a wafer includes: transferring the wafer from a transfer chamber to an annealing station by a robot arm; and monitoring at least one portion of an edge bevel removal area of the wafer over the robot arm when the wafer is transferred from the transfer chamber to the annealing station. The at least one portion of the edge bevel removal area includes a first portion and a second portion different from the first portion. When the wafer is passing through a predetermined location between the transfer chamber and the annealing station, a first charge-coupled device sensor located over the first portion of the edge bevel removal area is used to capture an image of the first portion, and a second charge-coupled device sensor located over the second portion of the edge bevel removal area is used to capture an image of the second portion.

Abstract: A method for inspecting a wafer includes: transferring the wafer from a transfer chamber to an annealing station by a robot arm; and monitoring at least one portion of an edge bevel removal area of the wafer over the robot arm when the wafer is transferred from the transfer chamber to the annealing station. The at least one portion of the edge bevel removal area includes a first portion and a second portion different from the first portion. When the wafer is passing through a predetermined location between the transfer chamber and the annealing station, a first charge-coupled device sensor located over the first portion of the edge bevel removal area is used to capture an image of the first portion, and a second charge-coupled device sensor located over the second portion of the edge bevel removal area is used to capture an image of the second portion.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, and an edge detector. The transfer chamber is configured to interface with an electroplating apparatus. The annealing station is arranged to anneal a wafer. The robot arm is arranged to transfer the wafer from the transfer chamber to the annealing station. The edge detector is disposed over the robot arm for the purpose of monitoring at least one portion of an edge bevel removal area of the wafer carried by the robot arm.

Abstract: A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, and an edge detector. The transfer chamber is configured to interface with an electroplating apparatus. The annealing station is arranged to anneal a wafer. The robot arm is arranged to transfer the wafer from the transfer chamber to the annealing station. The edge detector is disposed over the robot arm for the purpose of monitoring at least one portion of an edge bevel removal area of the wafer carried by the robot arm.