Patents by Inventor Chao-Wei Chiu
Chao-Wei Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12354929Abstract: A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.Type: GrantFiled: August 17, 2022Date of Patent: July 8, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Sheng-Feng Weng, Ming-Yu Yen, Wei-Jhan Tsai, Chao-Wei Chiu, Chao-Wei Li, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20250201621Abstract: A workpiece holder includes a chuck body and a seal ring. The chuck body includes a receiving surface configured to receive a workpiece and at least one vacuum port configured to apply a vacuum seal. The seal ring surrounds a side surface of the chuck body. A top surface of the seal ring is higher than the receiving surface of the chuck body, and the workpiece leans against the seal ring when the vacuum seal is applied between the workpiece and the chuck body.Type: ApplicationFiled: March 2, 2025Publication date: June 19, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Shiuan Wong, Chih-Chiang Tsao, Chao-Wei Chiu, Hao-Jan Pei, Wei-Yu Chen, Hsiu-Jen Lin, Ching-Hua Hsieh, Chia-Shen Cheng
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Publication number: 20250192011Abstract: A semiconductor package includes a package substrate, an integrated interconnect structure, an optical engine module, and an integrated circuit package. The integrated interconnect structure is bonded over the package substrate and includes an insulation body, a plurality of through vias extending through the insulation body. The optical engine module includes an electronic die, a photonic die, and a waveguide. A portion of the optical engine module is embedded in the integrated interconnect structure. The integrated circuit package is bonded over the integrated interconnect structure and electrically coupled to the optical engine module.Type: ApplicationFiled: December 7, 2023Publication date: June 12, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Wei Chiu, Ching-Hua Hsieh, Hsiu-Jen Lin, Hao-Jan Pei, Chia-Shen Cheng, Hsuan-Ting Kuo
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Publication number: 20250149488Abstract: In an embodiment, a method includes forming a device region along a first substrate; forming an interconnect structure over the device region and the first substrate; forming a metal pillar over the interconnect structure, forming the metal pillar comprising: forming a base layer over the interconnect structure; forming an intermediate layer over the base layer; and forming a capping layer over the intermediate layer; forming a solder region over the capping layer; and performing an etch process to recess sidewalls of the base layer and the capping layer from sidewalls of the intermediate layer and the solder region.Type: ApplicationFiled: February 23, 2024Publication date: May 8, 2025Inventors: Wei-Yu Chen, Chao-Wei Chiu, Hsin Liang Chen, Hao-Jan Shih, Hao-Jan Pei, Hsiu-Jen Lin
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Publication number: 20250149495Abstract: A semiconductor package and the method of forming the same are provided. The semiconductor package may include a substrate, a semiconductor package component having a semiconductor die bonded to the substrate, a lid attached to the substrate, and a first composite metal feature between the semiconductor package component and the lid. The first composite metal feature may include a first metal feature having a first material and a second metal feature having a second material. The first material may be an intermetallic compound. The second material may be different from the first material.Type: ApplicationFiled: February 15, 2024Publication date: May 8, 2025Inventors: Chao-Wei Chiu, Hsiu-Jen Lin, Hsuan-Ting Kuo, Ching-Hua Hsieh
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Patent number: 12266559Abstract: A method of handling a workpiece includes the following steps. A workpiece is placed on a chuck body, wherein the workpiece includes a tape carrier extending beyond a periphery of the chuck body and a workpiece body disposed on the tape carrier, and the chuck body includes a seal ring surrounding the periphery of the chuck body; the tape carrier is clamped outside the chuck body, wherein the tape carrier leans against the seal ring and an enclosed space is formed between the chuck body, the tape carrier and the seal ring; and a vacuum seal is formed by evacuating gas from the enclosed space to pull the periphery of the workpiece toward the chuck body.Type: GrantFiled: July 26, 2023Date of Patent: April 1, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Shiuan Wong, Chih-Chiang Tsao, Chao-Wei Chiu, Hao-Jan Pei, Wei-Yu Chen, Hsiu-Jen Lin, Ching-Hua Hsieh, Chia-Shen Cheng
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Publication number: 20250062181Abstract: A method includes depositing a first metal layer on a package component, wherein the package component comprises a first device die, forming a dielectric layer on the package component, and plating a metal thermal interface material on the first metal layer. The dielectric layer includes portions on opposing sides of the metal thermal interface material. A heat sink is bonded on the metal thermal interface material. The heat sink includes a second metal layer physically joined to the metal thermal interface material.Type: ApplicationFiled: November 13, 2023Publication date: February 20, 2025Inventors: Chao-Wei Chiu, Hsuan-Ting Kuo, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20250054892Abstract: A package structure including a first substrate and a second substrate is provided. The first substrate includes first bumps with first lateral dimension and second bumps with second lateral dimension. The first bumps are distributed in a first region of the first substrate, and the second bumps are distributed in the second region of the first substrate, wherein the first lateral dimension is greater than the second lateral dimension, and a first bump height of the first bumps is smaller than a second bump height of the second bumps. The second substrate includes conductive terminals electrically connected to the first bumps and the second bumps.Type: ApplicationFiled: January 4, 2024Publication date: February 13, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Wei Chiu, Wei-Yu Chen, Hsin Liang Chen, Hao-Jan Shih, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240389240Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Chao-Wei Chiu, Chih-Chiang Tsao, Jen-Jui Yu, Hsuan-Ting Kuo, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240387346Abstract: Embodiments include a device. The device includes an interposer, a package substrate, and conductive connectors bonding the package substrate to the interposer. Each of the conductive connectors have convex sidewalls. A first subset of the conductive connectors are disposed in a center of the package substrate in a top-down view. A second subset of the conductive connectors are disposed in an edge/corner of the package substrate in the top-down view. Each of the second subset of the conductive connectors have a greater height than each of the first subset of the conductive connectors.Type: ApplicationFiled: August 7, 2023Publication date: November 21, 2024Inventors: Chih-Chiang Tsao, Chao-Wei Chiu, Hsin Liang Chen, Chia-Shen Cheng, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240371827Abstract: A package structure includes a supporting base, conductive pillars, a first semiconductor die, a second semiconductor die, a first adhesive material, a second adhesive material and an isolation structure. The conductive pillars are disposed in the supporting base, and protruding out from a top surface of the supporting base. The second semiconductor die is adjacent to the first semiconductor die, wherein the first and second semiconductor dies are disposed on the supporting base and electrically connected to the conductive pillars. The first adhesive material is disposed in between the first semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The second adhesive material is disposed in between the second semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The isolation structure prevents a bleeding of the first and second adhesive material to an adjacent semiconductor die.Type: ApplicationFiled: May 3, 2023Publication date: November 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Ching-Hua Hsieh, Yi-Yang Lei, Chao-Wei Chiu, Ming-Yu Yen
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Publication number: 20240339424Abstract: Embodiments provide a device structure and method of forming a device structure including an infill structure to capture solder materials within confines of openings of the infill structure. Metal pillars of one device can penetrate through a non-conductive film and contact solder regions of another device. A separate underfill is not needed.Type: ApplicationFiled: August 7, 2023Publication date: October 10, 2024Inventors: Wei-Yu Chen, Chao-Wei Chiu, Hsin Liang Chen, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240332215Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.Type: ApplicationFiled: June 12, 2024Publication date: October 3, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Jui Yu, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Wei-Yu Chen, Chih-Chiang Tsao, Chao-Wei Chiu
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Publication number: 20240312941Abstract: An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.Type: ApplicationFiled: March 13, 2023Publication date: September 19, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Wei Chiu, Wei-Yu Chen, Chih-Chiang Tsao, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240266316Abstract: An embodiment is a device including a substrate comprising conductive pads, a package component bonded to the conductive pads of the substrate with solder connectors, the package component comprising an integrated circuit die, the integrated circuit die comprising die connectors, one of the solder connectors coupled to each of the die connectors and a corresponding conductive pad of the substrate, a first dielectric layer laterally surrounding each of the die connectors and a portion of the solder connectors, and a second dielectric layer being between the first dielectric layer and the substrate, the second dielectric layer laterally surrounding each of the conductive pads of the substrate.Type: ApplicationFiled: June 5, 2023Publication date: August 8, 2024Inventors: Wei-Yu Chen, Ching-Hua Hsieh, Hsiu-Jen Lin, Hao-Jan Pei, Chao-Wei Chiu, Hsin Liang Chen
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Patent number: 12051655Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.Type: GrantFiled: July 16, 2021Date of Patent: July 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Jui Yu, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Wei-Yu Chen, Chih-Chiang Tsao, Chao-Wei Chiu
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Patent number: 12051639Abstract: A package structure includes a first package, a second package, a conductive spacer, and a flux portion. The first package includes a semiconductor die. The second package is stacked to the first package. The conductive spacer is disposed between and electrically couples the first package and the second package. The flux portion is disposed between and electrically couples the first package and the conductive spacer, where the flux portion includes a first portion and a second portion separating from the first portion by a gap, and the first portion and the second portion are symmetric about an extending direction of the gap. The gap is overlapped with the conductive spacer.Type: GrantFiled: March 2, 2022Date of Patent: July 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tsao, Chao-Wei Chiu, Jen-Jui Yu, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240234192Abstract: A method includes attaching a carrier to a semiconductor wafer using a release film; removing the carrier from the semiconductor wafer; and performing a treatment process to remove the release film from the semiconductor wafer, the treatment process comprising: flowing an etchant through a diffusion plate within a treatment chamber, the diffusion plate comprising concentric rings separated by dividers, the concentric rings comprising a first concentric ring of holes, a second concentric ring of holes, and a third concentric ring of holes, each of the concentric rings having a different hole density; and performing a cleaning process on the semiconductor wafer.Type: ApplicationFiled: January 10, 2023Publication date: July 11, 2024Inventors: Cheng-Shiuan Wong, Chao-Wei Chiu, Wei-Yu Chen, Chih-Chiang Tsao, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240186275Abstract: Semiconductor devices including the use of solder materials and methods of manufacturing are provided. In embodiments the solder materials utilize a first tensile raising material, a second tensile raising material, and a eutectic modifier material. By utilizing the materials a solder material can be formed and used with a reduced presence of needles that may otherwise form during the placement and use of the solder material.Type: ApplicationFiled: January 9, 2023Publication date: June 6, 2024Inventors: Chao-Wei Chiu, Jen-Jui Yu, Hsuan-Ting Kuo, Cheng-Shiuan Wong, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240107682Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.Type: ApplicationFiled: April 21, 2023Publication date: March 28, 2024Inventors: Chao-Wei Chiu, Chih-Chiang Tsao, Jen-Jui Yu, Hsuan-Ting Kuo, Hsiu-Jen Lin, Ching-Hua Hsieh