Abstract: A semiconductor device includes a plurality of channel layers vertically spaced from one another. The semiconductor device includes a gate structure wrapping around each of the plurality of channel layers. The semiconductor device includes an epitaxial structure electrically coupled to the plurality of channel layers. The epitaxial structure contacts a sidewall, a portion of a top surface, and a portion of a bottom surface of each of the plurality of channel layers.

Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.

Abstract: A display module is provided, including a housing, a display unit disposed in the housing, and a hollow frame. The housing includes a plate, a sidewall, and a first hook, wherein the sidewall and the hook protrude from the plate. The frame includes a second hook close to the side of the frame and extending toward the housing. When the frame is joined to the housing, the second hook is hooked to the first hook.

Abstract: Provided is packages and methods of fabricating a package and. The method includes bonding a first device die with a second device die. The second device die is over the first device die. A bonding structure is formed in a combined structure including the first and the second device dies. A component is formed in the bonding structure. The component includes a passive device or a transmission line. The method further includes forming a first and a second electrical connectors electrically coupling to a first end and a second end of the component.

Abstract: A package includes an integrated circuit. The integrated circuit includes a first chip, a second chip, a third chip, and a fourth chip. The second chip and the third chip are disposed side by side on the first chip. The second chip and the third chip are hybrid bonded to the first chip. The fourth chip is fusion bonded to at least one of the second chip and the third chip.

Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: A method of fabricating a semiconductor device is described. A plurality of fins is formed over a substrate. Dummy gates are formed patterned over the fins, each dummy gate having a spacer on sidewalls of the patterned dummy gates. Recesses are formed in the fins using the patterned dummy gates as a mask. A passivation layer is formed over the fins and in the recesses in the fins. The passivation layer is patterned to leave a remaining passivation layer only in some of the recesses in the fins. Source and drain regions are epitaxially formed only in the recesses in the fins without the remaining passivation layer.

Abstract: A package structure and a method of fabricating the same are provided. The method includes bonding a first die and a second die to a wafer in a first die region of the wafer hybrid bonding; bonding a first dummy structure to the wafer in the first die region and a first scribe line of the wafer; and singulating the wafer and the first dummy structure along the first scribe line to form a stacked integrated circuit (IC) structure.

Abstract: A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.

Abstract: A display driving integrated circuit includes a common voltage buffer configured to provide a common voltage to a display panel and when a line outputting the common voltage and a gate line are short-circuited, apply a first current to the gate line or receive a second current from the gate line; a current generator configured to sum currents respectively corresponding to the first current and the second current and output an output current obtained by the summing; and a current detector configured to convert the output current into an output voltage and output a high or low signal based on a result of comparing the output voltage with a preset voltage.

Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.

Abstract: A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.

Abstract: An electronic apparatus and a data transmission method thereof are provided. The data transmission method is adapted to the electronic apparatus including a touch screen, and the data transmission method includes the following steps. An image frame is displayed through the touch screen. A connection with another electronic apparatus placed on the touch screen is established. Position information of said another electronic apparatus on the touch screen is detected through the touch screen, to capture a partial frame from the image frame according to the position information of said another electronic apparatus. Feature information of data to be transmitted is obtained from the partial frame. The data to be transmitted is sent to said another electronic apparatus via the connection according to the feature information.

Abstract: A package includes a first package structure and a second package structure stacked on the first package structure. The first package structure includes a redistribution structure, an integrated circuit, an encapsulant, and conductive structures. The integrated circuit is disposed on the redistribution structure and includes a first chip, a second chip, a third chip, and a fourth chip. The first chip includes a semiconductor substrate that extends continuously throughout the first chip. The second and the third chips are disposed side by side on the first chip. The fourth chip is disposed over the first chip and includes a semiconductor substrate that extends continuously throughout the fourth chip. Sidewalls of the first chip are aligned with sidewalls of the fourth chip. The encapsulant laterally encapsulates the integrated circuit. The conductive structures penetrate through the encapsulant.

Abstract: A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

Abstract: An electronic apparatus and an object information recognition method by using touch data thereof are provided. Touch sensing is performed in the case where no object touches a touch panel to obtain a specific background frame through the touch panel. A current touch sensing frame is obtained through the touch panel. Touch background data of a plurality of first frame cells in the specific background frame is respectively subtracted from touch raw data of a plurality of second frame cells in the current touch sensing frame to obtain a background removal frame including a plurality of cell values. The background removal frame is transformed into a touch sensing image. The touch sensing image is inputted to a trained neural network model to recognize object information of a touch object.

Abstract: An electronic apparatus and a data transmission method thereof are provided. The data transmission method is adapted to an electronic apparatus including a screen, and the data transmission method includes the following steps. An image frame is displayed through the screen. A selection marquee is displayed on the image frame through the screen, and the selection marquee is configured for selecting a partial image frame from the image frame. Connection information is displayed within the selection marquee through the screen, and feature information of data to be transmitted is recognized from the partial image frame selected by the selection marquee. A connection with another electronic apparatus is established according to the connection information. The data to be transmitted is sent to the another electronic apparatus via the connection according to the feature information.

Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.