Abstract: A method for testing memory in an integrated circuit device is disclosed. The method includes executing a test routine in a portion of the memory at a speed sufficient to fully test the memory cells, identifying faulty memory cells in the tested portion of the memory; writing an error map in another portion of the memory, the error map indicating the location of faulty memory cells found in the tested portion and, after executing the test routine and writing the error map, repairing at least some of the faulty memory cells using the error map. Once one portion of memory is tested, another portion is tested and a prior tested portion is used to write a new error map. Repairing, by analyzing the error map, is done at a slower speed than required for memory testing, allowing the use of a smaller logic section in the integrated circuit.