Abstract: A method for fabricating a floating gate. A semiconductor substrate is provided, on which a gate dielectric layer, a conductive layer, a first insulating layer, and a patterned mask layer with an opening are formed, such that the opening exposes the first insulating layer. The insulating layer and the conducting layer are sequentially etched to form a round-cornered trench, and the photo hard mask layer is removed. A second insulating layer is formed in the round-cornered trench. The first insulating layer and the exposed conducting layer are removed using the second insulating layer as a mask, and the first conducting layer covered by the second insulating layer remains as a floating gate.