Abstract: A manufacturing method of a semiconductor structure is provided. A first semiconductor die includes a first semiconductor substrate, a first interconnect structure formed thereon, a first bonding conductor formed thereon, and a conductive via extending from the first interconnect structure toward a back surface of the first semiconductor substrate. The first semiconductor substrate is thinned to accessibly expose the conductive via to form a through semiconductor via (TSV). A second semiconductor die is bonded to the first semiconductor die. The second semiconductor die includes a second semiconductor substrate including an active surface facing the back surface of the first semiconductor substrate, a second interconnect structure between the second and the first semiconductor substrates, and a second bonding conductor between the second interconnect structure and the first semiconductor substrate and bonded to the TSV.

Abstract: A wavelength conversion film including a phosphor layer and a light scattering layer is provided. The phosphor layer includes a first phosphor and a first substrate. The light scattering layer includes a plurality of titanium dioxide particles and a second substrate. The wavelength conversion film further includes a photoluminescence material and a plurality of nanoparticles. The photoluminescence material and the plurality of nanoparticles are located in at least one of the phosphor layer and the light scattering layer or respectively located in the phosphor layer and the light scattering layer. The wavelength conversion film of the invention may prevent the occurrence of photocatalytic effect and increase the light conversion efficiency.

Abstract: The present invention discloses a light emitting element comprising a printed circuit board and a light emitting diode. The printed circuit board comprises a photosensitive solder resist layer. Materials of the photosensitive solder resist layer comprise a reflective material and at least one of a conductive nanoparticle and a photoluminescent material. The light emitting diode is disposed on the photosensitive solder resist layer of the circuit board, and is electrically connected to the printed circuit board. By adding at least one of the conductive nanoparticle and the photoluminescent material, the light emitting element of the present invention reduces the photodegradation of the solder resist layer, and improves the reflectivity of the photosensitive solder resist layer.