Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.

Abstract: An integrated circuit can include at least one slew generator circuit comprising at least one body biasable reference transistor, the slew generator circuit configured to generate at least a first signal having a slew rate that varies according to characteristics of the reference transistor; a pulse generator circuit configured to generate a pulse signal having a first pulse with a duration corresponding to the slew rate of the first signal; and a counter configured to generate a count value corresponding to a duration of the first pulse.

Abstract: An integrated circuit device can include at least one oscillator stage having a current mirror circuit comprising first and second mirror transistors of a first conductivity type, and configured to mirror current on two mirror paths, at least one reference transistor of a second conductivity type having a source-drain path coupled to a first of the mirror paths, and a switching circuit coupled to a second of the mirror paths and configured to generate a transition in a stage output signal in response to a stage input signal received from another oscillator stage, wherein the channel lengths of the first and second mirror transistors are larger than that of the at least one reference transistor.

Abstract: An integrated circuit device can include at least one oscillator stage having a current mirror circuit comprising first and second mirror transistors of a first conductivity type, and configured to mirror current on two mirror paths, at least one reference transistor of a second conductivity type having a source-drain path coupled to a first of the mirror paths, and a switching circuit coupled to a second of the mirror paths and configured to generate a transition in a stage output signal in response to a stage input signal received from another oscillator stage, wherein the channel lengths of the first and second mirror transistors are larger than that of the at least one reference transistor.

Abstract: An integrated circuit can include at least one slew generator circuit comprising at least one body biasable reference transistor, the slew generator circuit configured to generate at least a first signal having a slew rate that varies according to characteristics of the reference transistor; a pulse generator circuit configured to generate a pulse signal having a first pulse with a duration corresponding to the slew rate of the first signal; and a counter configured to generate a count value corresponding to a duration of the first pulse.

Abstract: An integrated circuit device can include at least one oscillator stage having a current mirror circuit comprising first and second mirror transistors of a first conductivity type, and configured to mirror current on two mirror paths, at least one reference transistor of a second conductivity type having a source-drain path coupled to a first of the mirror paths, and a switching circuit coupled to a second of the mirror paths and configured to generate a transition in a stage output signal in response to a stage input signal received from another oscillator stage, wherein the channel lengths of the first and second mirror transistors are larger than that of the at least one reference transistor.

Abstract: An integrated circuit can include at least one slew generator circuit comprising at least one body biasable reference transistor, the slew generator circuit configured to generate at least a first signal having a slew rate that varies according to characteristics of the reference transistor; a pulse generator circuit configured to generate a pulse signal having a first pulse with a duration corresponding to the slew rate of the first signal; and a counter configured to generate a count value corresponding to a duration of the first pulse.

Abstract: A semiconductor circuit can include an array of static random access memory (SRAM) cells. A first SRAM cell may provide a first current through an insulated gate field effect transistor (IGFET) having a first conductivity type. A second SRAM cell may provide a second current through an IGFET having a second conductivity type. A first current division slew circuit can provide a first slew output current proportional to the first current to change the charge on a first slew capacitor. A second current division slew circuit can provide a second slew output current proportional to the second current to change the charge on a second slew capacitor. A pulse may be generated having a first edge determined by a launch signal and a second edge determined by the time the first or the second capacitor reach a predetermined potential.

Abstract: The present invention allows emulation of a programmable pipeline processor fabric or architecture. According to certain aspects, the invention permits real-time capture of state information for any given stage of a processing flow performed by the fabric or architecture. According to other aspects, the invention allows a particular stage and data set of a SIMD flow to be analyzed. According to other aspects, the invention utilizes an independent clocking domain for the capture of state information.

Abstract: A memory device that has an internal memory array provides timing signals to control the output timing of one or more redundant memory blocks that substitute for defective memory blocks in the internal memory array. In one embodiment, the internal memory array includes a pipelined output stage, and the timing signals ensure that the data is output from the memory devices in the order memory access requests are issued, even when the latency of the redundant memory blocks is less than the latency of the main memory array by up to two clock periods. In one embodiment, a FIFO memory queues the output data of the redundant memory blocks waiting to be output.

Abstract: A method is disclosed to carry out a data access operation in a data memory device that is subdivided into a plurality of memory arrays each array includes a plurality of memory cells accessible by an identifiable address. The method includes a step of asynchronously propagating in parallel a plurality of data access signals, each through a data access path over multiple propagation stages of signal lines interconnected between the memory arrays and each of the multiple propagation stages implementing an asynchronous local clock for receiving and sending said data access signals for carrying out said data access operation. The method further includes a step of adding a path delay in a selected set of the propagation stages to minimize a length of time difference in carrying out the data access operations through each of the different data access paths.

Abstract: A programmable input/output buffer has a first plurality of pull-down transistors connected between a supply voltage and an electrical system conductor on the integrated circuit and a second plurality of pull-down transistors connected between the electrical conductor and the system reference voltage. Reference circuits generate signals to turn on a first number of said first plurality of pull-up transistors and/or a second number of said second plurality of pull-down transistors to provide an input/output buffer impedance matching the impedance of the external transmission line either sending a signal to the programmable input/output buffer or receiving a signal from the programmable input/output buffer.

Abstract: A data handling system includes a memory that includes a cache memory and a main memory. The memory further includes a controller for simultaneously initiating two data access operations to the cache memory and to the main memory by providing a main memory access address with a time-delay increment added to a cache memory access address based on an access time delay between an initial data access time to the main memory relative to the cache memory. The main memory further includes a plurality of data access paths divided into a plurality of propagation stages interconnected between a plurality of memory arrays in the main memory wherein each of the propagation stages further implementing a local clock for asynchronously propagating a plurality of data access signals to access data stored in a plurality memory cells in each of the main memory arrays.

Abstract: A method is disclosed to carry out a data access operation in a data memory device that is subdivided into a plurality of memory arrays each array includes a plurality of memory cells accessible by an identifiable address. The method includes a step of asynchronously propagating in parallel a plurality of data access signals, each through a data access path over multiple propagation stages of signal lines interconnected between the memory arrays and each of the multiple propagation stages implementing an asynchronous local clock for receiving and sending said data access signals for carrying out said data access operation. The method further includes a step of adding a path delay in a selected set of the propagation stages to minimize a length of time difference in carrying out the data access operations through each of the different data access paths.

Abstract: A memory device that has an internal memory array provides timing signals to control the output timing of one or more redundant memory blocks that substitute for defective memory blocks in the internal memory array. In one embodiment, the internal memory array includes a pipelined output stage, and the timing signals ensure that the data is output from the memory devices in the order memory access requests are issued, even when the latency of the redundant memory blocks is less than the latency of the main memory array by up to two clock periods. In one embodiment, a FIFO memory queues the output data of the redundant memory blocks waiting to be output.

Abstract: A programmable input/output buffer has a first plurality of pull-down transistors connected between a supply voltage and an electrical system conductor on the integrated circuit and a second plurality of pull-down transistors connected between the electrical conductor and the system reference voltage. Reference circuits generate signals to turn on a first number of said first plurality of pull-up transistors and/or a second number of said second plurality of pull-down transistors to provide an input/output buffer impedance matching the impedance of the external transmission line either sending a signal to the programmable input/output buffer or receiving a signal from the programmable input/output buffer.

Abstract: A microcontroller fabricated on a semiconductor chip is adapted, when operating, to execute programs and instructions and, in response, to generate control signals to selectively control external apparatus. A clock generates timing signals to control the timing of the microcontroller execution and operation. An on-chip program memory has space avilable for storing a program to be executed by the microcontroller in sequential steps in successive address locations of the program memory. An instruction stored in unerasable memory on the chip initiates self-programming of the program memory with the program to be executed by the microcontroller by enabling a pointer timed by the clock to alternately read addresses containing steps of the program to be executed from off-chip memories and to write same into successive addresses of the on-chip program memory by incrementing the latter addresses with each step to be written therein.