Abstract: A system includes multiple HVAC systems. After receiving a demand request, a multiple-system controller a first anticipated power consumption associated with operating a first HVAC system at a first temperature setpoint during a future period of time of the demand response request and a second anticipated power consumption associated with operating a second HVAC system at a second temperature setpoint during the future period of time. Based at least in part on the first and the second anticipated power consumptions, a staging schedule is determined that indicates when to operate the first and second HVAC systems.

Abstract: A method for data storage may be provided. The method may include storing metadata of an image file onto a first storage device. The method may include dividing image data of the image file into at least one sub-image data set. The method may also include storing each sub-image data set of the at least one sub-image data set, onto a second storage device of at least one second storage device. The method may further include storing access information of the at least one second storage device onto the first storage device.

Abstract: A method for predicting swelling and life of a battery includes: receiving one or more of battery operating condition parameters and a battery swelling rate threshold; acquiring multiple battery swelling rate versus battery life distribution curves; acquiring a life distribution of the battery corresponding to the battery swelling rate threshold based on the multiple battery swelling rate versus battery life distribution curves; and acquiring a swelling rate distribution of the battery at a specified time or at a specified quantity of cycles based on the multiple battery swelling rate versus battery life distribution curves.

Abstract: A system includes multiple HVAC systems. After receiving a demand request, a multiple-system controller a first anticipated power consumption associated with operating a first HVAC system at a first temperature setpoint during a future period of time of the demand response request and a second anticipated power consumption associated with operating a second HVAC system at a second temperature setpoint during the future period of time. Based at least in part on the first and the second anticipated power consumptions, a staging schedule is determined that indicates when to operate the first and second HVAC systems.

Abstract: Systems and methods for file archiving. The systems may obtain an image file to be transmitted that includes image data in a first format and a metadata file in a second format. The metadata file may include identification information of the image data. The image data may be acquired from a scan of a subject using an imaging device. The systems may transmit, according to a first protocol, the image data in the first format to an image archiving system for archiving. The systems may also transmit, according to a second protocol, the metadata file in the second format to the image archiving system for archiving.

Abstract: The present disclosure is related to systems and methods for orthosis design. The method includes obtaining a three-dimensional (3D) model associated with a subject. The method includes obtaining one or more reference images associated with the subject. The method includes determining, based on the 3D model and the one or more reference images, orthosis design data for the subject. The orthosis design data may be used to determine an orthosis for the subject.

Abstract: A system includes multiple HVAC systems. After receiving a demand request, a multiple-system controller determines a first anticipated power consumption associated with operating a first HVAC system at a first temperature setpoint during a future period of time of the demand response request and a second anticipated power consumption associated with operating a second HVAC system at a second temperature setpoint during the future period of time. Based at least in part on the first and the second anticipated power consumptions, a staging schedule is determined that indicates when to operate the first and second HVAC systems.

Abstract: A system includes multiple HVAC systems. After receiving a demand request, a multiple-system controller a first anticipated power consumption associated with operating a first HVAC system at a first temperature setpoint during a future period of time of the demand response request and a second anticipated power consumption associated with operating a second HVAC system at a second temperature setpoint during the future period of time. Based at least in part on the first and the second anticipated power consumptions, a staging schedule is determined that indicates when to operate the first and second HVAC systems.

Abstract: The present disclosure is related to systems and methods for orthosis design. The method includes obtaining a three-dimensional (3D) model associated with a subject. The method includes obtaining one or more reference images associated with the subject. The method includes determining, based on the 3D model and the one or more reference images, orthosis design data for the subject. The orthosis design data may be used to determine an orthosis for the subject.

Abstract: The present disclosure is related to systems and methods for orthosis design. The method includes obtaining a three-dimensional (3D) model associated with a subject. The method includes obtaining one or more reference images associated with the subject. The method includes determining, based on the 3D model and the one or more reference images, orthosis design data for the subject. The orthosis design data may be used to determine an orthosis for the subject.

Abstract: A method for data storage may be provided. The method may include storing metadata of an image file onto a first storage device. The method may include dividing image data of the image file into at least one sub-image data set. The method may also include storing each sub-image data set of the at least one sub-image data set, onto a second storage device of at least one second storage device. The method may further include storing access information of the at least one second storage device onto the first storage device.

Abstract: Systems and methods for file archiving. The systems may obtain an image file to be transmitted that includes image data in a first format and a metadata file in a second format. The metadata file may include identification information of the image data. The image data may be acquired from a scan of a subject using an imaging device. The systems may transmit, according to a first protocol, the image data in the first format to an image archiving system for archiving. The systems may also transmit, according to a second protocol, the metadata file in the second format to the image archiving system for archiving.

Abstract: The present disclosure directs to a system and method for allocating and scheduling resources for data processing. The method comprises setting a plurality of containers on a processing apparatus. Each of the plurality of containers may be allocated with a corresponding virtual graphic processing unit (VGPU) resource. The method further comprises identifying one or more target containers from the plurality of containers. For each of the one or more target containers, the method further comprises causing the target container to obtain a target task from a message queue that includes at least one task, and causing the target container to process the target task.

Abstract: The present invention provides a process for metallurgy and separating a rare earth concentrate using a combination method, the process including: treating the rare earth concentrate containing bastnaesite by using a method including roasting under an atmosphere, leaching with hydrochloric acids, and roasting with a sulfuric acid, wherein stepping acid leaching with low-concentration hydrochloric acids is controlled during the leaching with the hydrochloric acids so as to obtain a rare earth solution with a high concentration (150-250 g/L REO), such that a leaching rate of Ce reaches 60% or more, and the content of F? in a leaching liquor is reduced by aging; and rare earth is further recovered from a leach residue by roasting with the sulfuric acid and leaching with water, and the total yield of the rare earth reaches 95% or more.

Abstract: The present disclosure is related to systems and methods for orthosis design. The method includes obtaining a three-dimensional (3D) model associated with a subject. The method includes obtaining one or more reference images associated with the subject. The method includes determining, based on the 3D model and the one or more reference images, orthosis design data for the subject. The orthosis design data may be used to determine an orthosis for the subject.

Abstract: The present invention relates to a manufacturing method of SOI devices, and in particular, to a manufacturing method of SOI high-voltage power devices.

Abstract: A method of manufacturing a SOI high voltage power chip with trenches is disclosed. The method comprises: forming a cave and trenches at a SOI substrate; filling oxide in the cave; oxidizing the trenches, forming oxide isolation regions for separating low voltage devices at the same time; filling oxide in the oxidized trenches; and then forming drain regions, source regions and gate regions for a high voltage power device and low voltage devices. The process involves depositing an oxide layer overlapping the cave of the SOI substrate. A SOI high voltage power chip thus made will withstand at least above 700V voltage.

Abstract: The present invention relates to a method of fabricating an SOI SJ LDMOS structure that can completely eliminate the substrate-assisted depletion effects, comprising the following steps: step one: a conducting layer is prepared below the SOI BOX layer using the bonding technique; the conducting layer is prepared in the following way: depositing a barrier layer on a first bulk silicon wafer, and then depositing a charge conducting layer, thereby obtaining a first intermediate structure; forming a silicon dioxide layer on a second bulk silicon wafer via thermal oxidation, then depositing a barrier layer, and finally depositing a charge conducting layer, thereby obtaining a second intermediate structure; bonding the first intermediate structure and the second intermediate structure using the metal bonding technology to arrange the conducting layer below the SOI BOX layer; step two: a SJ LDMOS structure is fabricated on the SOI substrate having a conducting layer.

Abstract: The present invention provides a method of fabricating a graphene-based field effect transistor, which includes steps of: providing a semiconductor substrate on which a non-functionized graphene layer is formed; forming a metal oxide film as a nucleation layer through a reaction between a metal source and water which acts as oxidizer and is physically absorbed to a surface of the graphene layer; and generating a HfO2 gate dielectric layer through a reaction between a hafnium source and water acting as oxidizer by using the nucealtion layer. In comparison with the prior art, the method of the present invention is mainly characterized in that the metal oxide film acting as the nucleation layer is formed through a reaction between the metal source and water which acts as oxidizer and is physically absorbed to the surface of graphene.

Abstract: The present invention relates to a method of depositing a gate dielectric, a method of preparing a MIS capacitor and the MIS capacitor. In the method of depositing the gate dielectric, a semiconductor substrate surface is preprocessed with oxygen plasma and nitrogen-containing plasma to form a nitrogen-containing oxide layer thereon. Then, a high-k gate dielectric layer is grown on the nitrogen-containing oxide layer surface by a plasma-enhanced atomic layer deposition process, and the oxide layer converts during the gate dielectric layer growth process into a buffer layer of a dielectric constant higher than SiO2. Then, a metal electrode is formed on both an upper layer and a lower layer of the thus-formed semiconductor construction, so that a MIS capacitor is prepared.