Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.

Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.

Abstract: An antenna module includes a first antenna radiator including a feeding terminal, a second antenna radiator, a first ground radiator, a second ground radiator and a capacitive element. The second antenna radiator is disposed on one side of the first antenna radiator, and a first gap is formed between a main portion of the second antenna radiator and the first antenna radiator. The first ground radiator is disposed on another side of the first antenna radiator, and a second gap is formed between the first antenna radiator and the first antenna radiator. The second ground radiator is disposed between the second antenna radiator and the first ground radiator, and a third gap is formed between the second ground radiator and a first branch of the second antenna radiator. The capacitive element is disposed on the third gap and connects the second antenna radiator and the second ground radiator.

Abstract: A touch device includes a touch panel, a circuit board, a vibrating unit and a pressure detection module. The touch panel includes two press regions. When different press regions of the touch panel are pressed by the user, the vibration feedback values generated by different press regions are different.

Abstract: The present invention relates to a restart protection device and a method thereof, wherein the restart protection device is installed in an electric device, and comprises a switch module and a restart protecting module. The restart protecting module is connected between the switch module and a motor of the electric device, used for preventing the current outputted by an external electrical power from directly flowing into the motor when the electric device is restarted. To start the electric device, the user must follow the steps of the restart protection method, such that the unexpected accidents resulted from the sudden restart of the electric device can be effectively prevented.

Abstract: The present invention relates to a restart protection device and a method thereof, wherein the restart protection device is installed in an electric device, and comprises a switch module and a restart protecting module. The restart protecting module is connected between the switch module and a motor of the electric device, used for preventing the current outputted by an external electrical power from directly flowing into the motor when the electric device is restarted. To start the electric device, the user must follow the steps of the restart protection method, such that the unexpected accidents resulted from the sudden restart of the electric device can be effectively prevented.

Abstract: The present invention relates to a forward/backward rotation switching mechanism, comprising: a cover, a turntable, a terminal-fixing body, a first contact terminal, and a second contact terminal. In the present invention, a plurality of dust-off trenches are especially formed on the peripheral edges of the turntable for preventing from the dust accumulation between the turntable and a cover; therefore, even if the forward/backward rotation switching mechanism is used in an environment having a lot of dust, the turntable can still be turned around because the dust is ruled out by the dust-off trenches.

Abstract: The present invention relates to a forward/backward rotation switching mechanism, comprising: a cover, a turntable, a terminal-fixing body, a first contact terminal, and a second contact terminal. In the present invention, a plurality of dust-off trenches are especially formed on the peripheral edges of the turntable for preventing from the dust accumulation between the turntable and a cover; therefore, even if the forward/backward rotation switching mechanism is used in an environment having a lot of dust, the turntable can still be turned around because the dust is ruled out by the dust-off trenches.

Abstract: Heat-spot distant type push switch structure comprises: a supporting terminal, a compression spring, a switching spring, an electrical terminal, and a sliding lever assembly. Compression spring, switching spring and the switching member of the sliding lever assembly are stacked for connection and facilitate the occupied space of the heat-spot distant type push switch structure capable of being reduced; moreover, the supporting terminal, the compression spring, the switching spring, the electrical terminal, and the sliding lever assembly are designed to particular structures for forming a specific distant between the switching member and the touch point of two contact points of the heat-spot distant type push switch structure, such that the switching member is away from the heat-spot produced by the two contact points; therefore the switching member can still not be fused after the heat-spot distant type push switch structure is long-term used.