Abstract: A light source module of a white light emitting diode comprising a blue LED, a packaging substrate, wherein the blue LED is mounted on and electrically connected to the packaging substrate, a cap layer, enclosing the blue LED, wherein the cap layer includes a mixture of silicon and phosphor blend at ratio of 1:0.2-0.5, and a protective layer over the cap layer.

Abstract: A laminated light-emitting diode display device and a manufacturing method thereof are described. The laminated light-emitting diode display device has an insulator, a circuitry device placed on the insulator and having of a plurality of circuits interconnected with each other, and a plurality of SMT-type light-emitting diodes electrically connected to the circuits of the circuitry unit.

Abstract: A laminated light-emitting diode display device and a manufacturing method thereof are described. The laminated light-emitting diode display device has an insulator, a circuitry device placed on the insulator and having of a plurality of circuits interconnected with each other, and a plurality of SMT-type light-emitting diodes electrically connected to the circuits of the circuitry unit.

Abstract: A vector signal processor of the present invention consisting of a digital signal processor unit, a VSP command bus, a data flow interface, a broadcast interface, a multi-channel buffered serial port (McBSP) network, and a host interface. The vector signal processor of this invention has high processing speed, better communication between modules, far better coordination, and uses daughter cards to enhance various processing functions.

Abstract: A method of forming a salicide. A metal layer is formed on a silicon-based substrate comprising a gate with a spacer on the side wall of the gate and a source/drain is provided. Next, a first thermal treatment is performed to make the portions of the metal layer react with the silicon in the gate and the source/drain to form a salicide. Then, any unreacted metal and the spacer are removed. An ion containing silicon is introduced into the source/drain. Finally, a second thermal treatment is performed.

Abstract: A method of forming a salicide. A metal layer is formed on a silicon-based substrate comprising a gate with a spacer on the side wall of the gate and a source/drain is provided. Next, a first thermal treatment is performed to make the portions of the metal layer react with the silicon in the gate and the source/drain to form a salicide. Then, any unreacted metal and the spacer are removed. An ion containing silicon is introduced into the source/drain. Finally, a second thermal treatment is performed.

Abstract: The present invention provides a chemical mechanical polishing device for polishing a wafer. The chemical mechanical polishing device comprises a platen, an outer polishing pad, an inner polishing pad, a slurry providing system, and a rotating carrier. The inner polishing pad is located on the platen. The outer polishing pad is mounted on the outer polishing pad and peeled off when abraded from overuse. The slurry providing system provides a slurry to the surface of the outer polishing pad. The rotating carrier holds the wafer and contacts the surface of the wafer with the slurry and the polishing pad to carry out the chemical mechanical polishing process.

Abstract: A method of forming a cooper damascene interconnect. First, a metal and a dielectric layer are formed on a substrate in sequence. Next, a damascene opening is formed in the dielectric layer. A metal barrier/Cu seed layer is then formed on the dielectric layer conformally. CMP is performed to remove parts of the metal barrier/Cu seed layer covering on the surface of the dielectric layer. A chemical electroplating is performed to form a Cu layer filling the damascene opening on the metal barrier/Cu seed layer. Finally, CMP is performed.

Abstract: The present invention provides a chemical mechanical polishing apparatus for polishing a wafer. The chemical mechanical polishing apparatus comprises a platen, a polishing pad, a transparent element (transparent window), a slurry providing system, and a rotating carrier. The platen comprises a light source for projecting a light and a light detector for detecting the light reflected by the wafer. The polishing pad has a first opening on the platen. The transparent element is detachably located on the first opening to admit light. The slurry providing system provides slurry to the surface of the polishing pad. The rotating carrier holds the wafer and contacts the surface of the wafer with the slurry and the polishing pad to carry out the chemical mechanical polishing process.

Abstract: A method of depositing thin films has steps of: providing a physical vapor deposition (PVD) vacuum reactor to deposit a first layer; providing at least a metal-organic chemical vapor deposition (MOCVD) vacuum reactor to deposit a second layer on the first layer; and providing a radio frequency (RF) plasma treatment reactor to perform plasma treatment on the second layer.

Abstract: This method of prevention of particle pollution in a pre-clean chamber includes an oxygen gas supplying step for injecting oxygen gas into the pre-clean chamber; and a plasma generating step for ionizing the oxygen gas into plasma so as to interact with silicon-rich oxide to form a silicon oxide layer in the pre-clean chamber. The method according to the invention could prevent particle pollution due to peeling-off of silicon-rich oxide in a pre-clean chamber so as to prolong the life of a bell-jar therein.

Abstract: A method for rapid preventing particles in a pre-clean chamber according to the invention includes a silica material supply step for providing a silica material in the pre-clean chamber, a gas supply step for providing oxygen gas and sputtering gas into the pre-clean chamber, and a plasma generating step for ionizing the oxygen gas and the sputtering gas by RF to form plasma and then impacting the plasma onto the silica material, so that the silica dislodged from the silica material and it reacts with the ionized oxygen at a time so as to form a silicon oxide layer rapidly on the bell-jar in the pre-clean chamber. The method of the invention prevents the silicon-rich oxide from peeling quickly so as to extend the life of the bell-jar.

Abstract: The present invention provides a method of fabricating an interconnect structure. First, a semiconductor substrate comprising a conductive region containing a metal line and a hole is provided. Next, a titanium layer is formed on the semiconductor substrate. Next, a first titanium nitride layer is formed on the titanium layer by chemical vapor deposition. Finally, a second titanium nitride layer is formed on the first titanium nitride layer by physical vapor deposition.

Abstract: This method of prevention of particle pollution in a pre-clean chamber includes an oxygen gas supplying step for injecting oxygen gas into the pre-clean chamber; and a plasma generating step for ionizing the oxygen gas into plasma so as to interact with silicon-rich oxide to form a silicon oxide layer in the pre-clean chamber. The method according to the invention could prevent particle pollution due to peeling-off of silicon-rich oxide in a pre-clean chamber so as to prolong the life of a bell-jar therein.

Abstract: A method for rapid preventing particles in a pre-clean chamber according to the invention includes a silica material supply step for providing a silica material in the pre-clean chamber, a gas supply step for providing oxygen gas and sputtering gas into the pre-clean chamber, and a plasma generating step for ionizing the oxygen gas and the sputtering gas by RF to form plasma and then impacting the plasma onto the silica material, so that the silica dislodged from the silica material and it reacts with the ionized oxygen at a time so as to form a silicon oxide layer rapidly on the bell-jar in the pre-clean chamber. The method of the invention prevents the silicon-rich oxide from peeling quickly so as to extend the life of the bell-jar.

Abstract: A retaining ring of a wafer carrier includes a polymer containing abrasives. The abrasives can be released from the polymer by the friction between the polymer and the polishing pad. Therefore, it is convenient to maintain the wafer and is possible to prevent abrasives from aggregating in the polishing slurry. Meanwhile, the time for replacing the polishing slurry can be reduced and the polishing operation as a whole can be simplified so as to reduce the cost and promote productive efficiency.

Abstract: A method for cleaning out silicon-rich oxide in a pre-clean chamber includes a fluoride induction step, a plasma formation step and a draw-out step. In this method, a fluoride is employed to produce plasma. The plasma of the fluoride reacts with silicon-rich oxide formed on a bell-jar to produce volatile reactants and then the reactants are drown out. With this method, the silicon-rich oxide on the bell-jar is efficiently and quickly cleaned out.

Abstract: A method for preventing particles in a pre-clean chamber includes a silica material supplying step and a silica sputtering step. With this method, impacting plasma onto a silica material dislodges silica. The dislodged silica is allowed to deposit on a layer of silicon-rich oxide on the bell-jar in the pre-clean chamber to prevent the silicon-rich oxide from peeling quickly so as to extend the life of the bell-jar.

Abstract: A method of fabricating a shallow trench isolation in semiconductor substrate comprises a densification process after performing chemical-mechanical polishing on an isolation plug. Thus, the isolation plug can prevent micro-scratches from forming deep scratches. Therefore, shorts arising from the micro-scratches do not happen.

Abstract: A method of fabricating a dual damascene is provided. A dielectric layer is formed on a substrate. A diffusion barrier layer is formed on the dielectric layer. A portion of the diffusion barrier layer and the dielectric layer is removed to form a trench and a via hole. A barrier layer is formed on the diffusion barrier layer and in the trench and the via hole. The barrier layer on the diffusion barrier layer is removed by chemical-mechanical polishing. A conductive layer is formed in the trench and the via hole by selective deposition. A planarization step is performed with the diffusion barrier layer serving as a stop layer.