Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Abstract: A method for improving the accuracy of speech recognition is disclosed. In one embodiment, such a method receives speech input from a user. The method further receives background inputs describing at least one of a webpage and an application from which the speech input was received. The method determines a language associated with the speech input and determines a weight and confidence level for each of the background inputs. A score is calculated for each of the background inputs based on the corresponding weight and confidence level. The method determines textual candidates for output in response to the speech input and ranks the textual candidates using a function that takes into account the scores and/or confidence levels of the background inputs. The textual candidate with the highest ranking may be returned to the user. A corresponding system and computer program product are also disclosed.

Abstract: SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of transistors at scaled IC technology nodes and relax limits on SRAM performance optimization imposed by FinFET-based SRAMs. GAA-based SRAM cells described have active region layouts with active regions shared by pull-down GAA transistors and pass-gate GAA transistors. A width of shared active regions that correspond with the pull-down GAA transistors are enlarged with respect to widths of the shared active regions that correspond with the pass-gate GAA transistors. A ratio of the widths is tuned to obtain ratios of pull-down transistor effective channel width to pass-gate effective channel width greater than 1, increase an on-current of pull-down GAA transistors relative to an on-current of pass-gate GAA transistors, decrease a threshold voltage of pull-down GAA transistors relative to a threshold voltage of pass-gate GAA transistors, and/or increases a ? ratio of an SRAM cell.

Abstract: A driving mechanism for moving an optical element is provided, including a fixed part, a movable part, a driving assembly, and a first guiding member connected between the fixed part and the movable part. The optical element is disposed on the movable part, and the driving assembly drives the movable part to move relative to the fixed part. The first guiding member is configured for guiding the movable part to move relative to the fixed part.

Abstract: The present disclosure discloses a fastener and a fastener assembly. The fastener is configured for connecting a first component to a second component, and comprises a main body, at least two clamping arms and at least two abutting arms. The main body is annular. The at least two clamping arms are formed by extending from the main body and configured to clamp the first component. The at least two abutting arms are formed by extending from the main body and configured to abut against the second component. The first component and the second component of the fastener assembly of the present application can be connected to each other stably via the fastener.

Abstract: The current disclosure is directed to a SRAM bit cell having a reduced coupling capacitance. In a vertical direction, a wordline “WL” and a bitline “BL” of the SRAM cell are stacked further away from one another to reduce the coupling capacitance between the WL and the BL. In an embodiment, the WL is vertically spaced apart from the BL with one or more metallization level that none of the WL or the BL is formed from. Connection island structures or jumper structures are provided to connect the upper one of the WL or the BL to the transistors of the SRAM cell.

Abstract: A computer-implemented method, according to one embodiment, includes determining a domain and category information from metadata associated with a first webpage. The method further includes determining component types, hierarchies and grouping relationships for a plurality of text elements on the first webpage and constructing context information for the text elements. Word vectors are calculated based on the grouping relationships and the context information, and text feature types of the text elements are extracted based on the word vectors and the context information. The method further includes using the extracted text feature types to determine a re-ordering of a translation of the text elements. A computer program product, according to another embodiment, includes a computer readable storage medium having program instructions embodied therewith. The program instructions are readable and/or executable by a computer to cause the computer to perform the foregoing method.

Abstract: A safety driving detection and auxiliary system comprises a physiological sensing module, an alcohol detection module, a warning device and a computing device. The physiological sensing module is configured to obtain at least one piece of physiological information of a driver. The alcohol detection module is configured to detect an alcohol concentration of the driver. The warning device is configured to generate a warning signal. The computing device is connected to the physiological sensing module, the alcohol detection module and the warning device, and is configured to determine whether to actuate a vehicle controller according to the alcohol concentration of the driver, obtain a vehicle speed information from the vehicle controller, and actuate the warning device or/and control the vehicle controller at least according to the at least one piece of physiological information and the vehicle speed information.

Abstract: From an input image comprising a portion of text, the portion of text is extracted. The portion of text comprises text in a first natural language. The input image is classified into a candidate scene within a set of predefined scenes. The candidate scene is scored according to a quality measure. Using a predefined scene parameter of the scored candidate scene, the portion of text is translated. In the input image, the portion of text is replaced. with the translated portion of text.

Abstract: In one general embodiment, a computer-implemented method includes analyzing document object model code for generating locators of elements of a web page. The locators are output visibly on a user interface displaying the web page. A page object code template of the web page is generated. Mappings of the elements and/or the locators to page object variables are received from a user. Representations of the mappings are output visibly on the user interface displaying the web page. Mappings from page areas of the web page to page object functions are received from the user. Representations of the mappings from the page areas of the web page to the page object functions are output visibly on the user interface displaying the web page. Code references are rendered on the user interface displaying the web page.

Abstract: A method, computer system, and a computer program product are provided for responding to a language input query with ad hoc enriched term data. The technique comprises extracting information relating to the language input query using a Language Support Assistance Service. The extracted information includes one or more language terms requiring further support and an associated request type. This is identified from metadata relating to the language input query. Information is provided to a Term Related Corpus Data Service that includes one or more language terms requiring further support and the identified request type and any identified sources. The Term Related Corpus Data Service returns one or more ad hoc enriched terms that are tailored to the one or more language terms requiring further support and is according to the associated request type. The Language Support Assistance Service provides a response to the language input query.

Abstract: A wireless vehicle control device, disposed on a vehicle, includes a first communication unit, at least one second communication unit and a central management unit. The first communication unit is configured to detect a first communication signal of a portable electronic device. The at least one second communication unit is configured to detect a second communication signal of the portable electronic device, wherein a communication range of the at least one second communication unit is smaller than that of the first communication unit. The central management unit is configured to activate the at least one second communication unit to perform detection when determining that the first communication unit is paired with the portable electronic device according to the first communication signal, and control at least one vehicle lock according to the first communication signal when a distance corresponding to the second communication signal is not greater than a default distance.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a functional cell region including an n-type functional transistor and a p-type functional transistor. The semiconductor structure also includes a first power transmission cell region including a first cutting feature and a first contact rail in the first cutting feature. The semiconductor structure also includes a first power rail electrically connected to a source terminal of the p-type functional transistor and the first contact rail of the first power transmission cell region. The semiconductor structure also includes a second power transmission cell region adjacent to the first power transmission cell and including a second cutting feature and second contact rail in the second cutting feature. The semiconductor structure also includes an insulating strip extending from the first cutting feature to the second cutting feature in a first direction.

Abstract: A memory device is provided. The memory device includes a memory cell array having a plurality of memory cells arranged in a matrix of a plurality of rows and a plurality of columns. Each of the plurality of columns include a first plurality of memory cells connected to a first bit line and a second bit line. A pre-charge circuit is connected to the memory cell array. The pre-charge circuit pre-charges each of the first bit line and the second bit line from a first end. A pre-charge assist circuit is connected to the memory cell array. The pre-charge assist circuit pre-charges each of the first bit line and the second bit line from a second end, the second end being opposite the first end.

Abstract: A clock correction method suitable for a communication device comprising a clock correction circuit comprises: in response to the communication device being enabled and entering an active mode, calculating, by the clock correction circuit, a clock-period ratio between a slow clock and a fast clock; in response to the communication device operating in a power-saving mode for a power-saving period, counting at least one rising edge of the slow clock received by the clock correction circuit during the power-saving period, as a cumulative number; in response to the communication device switching to an active mode, calculating the difference between an internal time of the communication device and a reference time of another communication device as a time offset; and in the active mode, adjusting, by the clock correction circuit, the clock-period ratio by using a compensation value related to the clock-period ratio, the cumulative number and the time offset.

Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type and a fourth active region of a fourth set of transistors of a second type. The first, second, third and fourth active regions extend in a first direction, and are in a first level. The first and second active regions are adjacent to a first boundary and have a first width in a second direction. The third active region is adjacent to a second boundary, and has a second width. The fourth active region is between the second active region and the third active region, and has the first width.

Abstract: Embodiments of the present disclosure relate to a method, system, and computer program product for translation of rich text. In some embodiments, a method is disclosed. According to the method, one or more candidate formats are determined for source rich text. A target format for the source rich text is selected from the one or more candidate formats based on one or more corresponding images obtained from rendering the source rich text in the one or more candidate formats. Based on the target format, a translation editing environment is provided for editing a translation of the source rich text. In other embodiments, a system and a computer program product are disclosed.

Abstract: A memory device is provided. The memory device includes a memory cell array having a plurality of memory cells arranged in a matrix of a plurality of rows and a plurality of columns. Each of the plurality of columns include a first plurality of memory cells connected to a first bit line and a second bit line. A pre-charge circuit is connected to the memory cell array. The pre-charge circuit pre-charges each of the first bit line and the second bit line from a first end. A pre-charge assist circuit is connected to the memory cell array. The pre-charge assist circuit pre-charges each of the first bit line and the second bit line from a second end, the second end being opposite the first end.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A method, computer system, and a computer program product for task assistance is provided. The present invention may include acquiring a request expression input by a user. The present invention may include identifying a request intent associated with a task based on the request expression. The present invention may include determining a response script corresponding to the request intent. The present invention may include executing the response script to complete the task and presenting the process of running the task in a user-interface (UI).