Patents by Inventor Chao-Yun Cheng

Chao-Yun Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11003033
    Abstract: A method for manufacturing a display panel is disclosed. The method includes: forming a color filter and a transparent conductive film on a surface of a first substrate, the color filter being interposed between the first substrate and the transparent conductive film; forming an electrostatic protective layer on the other surface of the first substrate; forming another transparent conductive film on a second substrate; forming a light-valve molecular layer between the first substrate and the second substrate; performing a defect inspection in the display panel; and irradiating a laser onto the electrostatic protective layer when a defect is found in the display panel, such that a carbonization structure is formed in the electrostatic protective layer at a position corresponding to the defect.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: May 11, 2021
    Assignee: AU OPTRONICS (KUNSHAN) CO., LTD.
    Inventors: Chao-Yun Cheng, Shan-Fang Chen, Haiyan Liu
  • Publication number: 20200150500
    Abstract: A method for manufacturing a display panel is disclosed. The method includes: forming a color filter and a transparent conductive film on a surface of a first substrate, the color filter being interposed between the first substrate and the transparent conductive film; forming an electrostatic protective layer on the other surface of the first substrate; forming another transparent conductive film on a second substrate; forming a light-valve molecular layer between the first substrate and the second substrate; performing a defect inspection in the display panel; and irradiating a laser onto the electrostatic protective layer when a defect is found in the display panel, such that a carbonization structure is formed in the electrostatic protective layer at a position corresponding to the defect.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 14, 2020
    Inventors: Chao-Yun CHENG, Shan-Fang CHEN, Haiyan LIU
  • Publication number: 20130126975
    Abstract: A thin film transistor array and a circuit structure thereof are provided. The circuit structure includes a patterned metal layer, a transparent conductive layer and a dielectric layer. The transparent conductive layer is formed on and contacts a top surface of the patterned metal layer. The dielectric layer overlies and contacts the patterned metal layer and the transparent conductive layer. In addition, the dielectric layer has a contact window to expose a portion of the transparent conductive layer. The transparent conductive layer on the top surface of the patterned metal layer can protect the surface layer metal against damage during fabrication of the contact window.
    Type: Application
    Filed: February 21, 2012
    Publication date: May 23, 2013
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Chao-Yun Cheng, Shin-Jien Kuo, Chih-Chiang Chuang
  • Patent number: 7922921
    Abstract: The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: April 12, 2011
    Assignee: AU Optronics Corp.
    Inventors: Chih-Chung Chuang, Shin-Jien Kuo, Chao-Yun Cheng, Shu-Feng Wu
  • Patent number: 6926014
    Abstract: A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: August 9, 2005
    Assignee: Au Optronics Corp.
    Inventors: Chao-Yun Cheng, Shin-Jien Kuo, Chih-Chung Chuang, Shu-Feng Wu
  • Publication number: 20040209471
    Abstract: The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.
    Type: Application
    Filed: March 17, 2004
    Publication date: October 21, 2004
    Inventors: Chih-Chung Chuang, Shin-Jien Kuo, Chao-Yun Cheng, Shu-Feng Wu
  • Publication number: 20040103914
    Abstract: A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.
    Type: Application
    Filed: May 22, 2003
    Publication date: June 3, 2004
    Applicant: AU Optronics Corp.
    Inventors: Chao-Yun Cheng, Shin-Jien Kuo, Chih-Chung Chuang, Shu-Feng Wu