Abstract: The present invention belongs to the bioengineering field, and relates to a method for fermentation production of L-theanine by using an Escherichia coli genetically engineered bacterium. The engineered bacterium is obtained by serving a strain as an original strain, wherein the strain is obtained after performing a single copy of T7RNAP, a dual copy of gmas, xylR knockout, and sucCD knockout on an Escherichia coli W3110 genome, and by integrating genes xfp, pta, acs, gltA, and ppc, and knocking out ackA on the genome. The present invention has a high yield, and stable production performance; after 20-25 h, L-theanine has a titer of 75-80 g/L, and the yield is up to 52-55%. The fermentation broth is purified by membrane separation in combination with a cation-anion resin series technique. Moreover, the one-step crystallization yield is 72.3% and the L-theanine final product has a purity of 99%.

Abstract: The present invention belongs to the bioengineering field, and relates to a method for fermentation production of L-theanine by using an Escherichia coli genetically engineered bacterium. The engineered bacterium is obtained by serving a strain as an original strain, wherein the strain is obtained after performing a single copy of T7RNAP, a dual copy of gmas, xylR knockout, and sucCD knockout on an Escherichia coli W3110 genome, and by integrating genes xfp, pta, acs, gltA, and ppc, and knocking out ackA on the genome. The present invention has a high yield, and stable production performance; after 20-25 h, L-theanine has a titer of 75-80 g/L, and the yield is up to 52-55%. The fermentation broth is purified by membrane separation in combination with a cation-anion resin series technique. Moreover, the one-step crystallization yield is 72.3% and the L-theanine final product has a purity of 99%.

Abstract: Disclosed are a display substrate, a display device, a manufacturing method and a repairing method. A capacitor structure in the display substrate includes a first electrode and a second electrode. The first electrode includes a first main body portion extending in a first direction, first branch portions extending in a second direction, and a first connection portion connecting the first branch portions to the first main body portion. The second electrode includes a second main body portion extending in the first direction, second branch portions extending in the second direction, and a second connection portion connecting the second branch portions to the second main body portion. One side of the first electrode having the first branch portions faces one side of the second electrode having the second branch portions, and each first branch portion and a corresponding second branch portion form a capacitor.

Abstract: A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.

Abstract: Disclosed are a display substrate, a display device, a manufacturing method and a repairing method. A capacitor structure in the display substrate includes a first electrode and a second electrode. The first electrode includes a first main body portion extending in a first direction, first branch portions extending in a second direction, and a first connection portion connecting the first branch portions to the first main body portion. The second electrode includes a second main body portion extending in the first direction, second branch portions extending in the second direction, and a second connection portion connecting the second branch portions to the second main body portion. One side of the first electrode having the first branch portions faces one side of the second electrode having the second branch portions, and each first branch portion and a corresponding second branch portion form a capacitor.

Abstract: The present application discloses a first display substrate including a plurality of core-coil assemblies configured to detect a touch. Each of the plurality of core-coil assemblies includes a first base substrate; a core layer on the first base substrate and including a plurality of magnetic permeable cores substantially along a first direction and spaced apart from each other, each of the plurality of magnetic permeable cores substantially along a second direction; and a conductive coil wound around the plurality of magnetic permeable cores for multiple turns and insulated from the core layer.

Abstract: The present application discloses a first display substrate including a plurality of core-coil assemblies configured to detect a touch. Each of the plurality of core-coil assemblies includes a first base substrate; a core layer on the first base substrate and including a plurality of magnetic permeable cores substantially along a first direction and spaced apart from each other, each of the plurality of magnetic permeable cores substantially along a second direction; and a conductive coil wound around the plurality of magnetic permeable cores for multiple turns and insulated from the core layer.

Abstract: The present disclosure provides an array substrate and a display device for reducing the space occupied by the antenna inside the mobile phone, so as to reduce the thickness of the mobile phone and make the mobile phone thinner and lighter. The array substrate according to the present disclosure includes dummy signal lines and a conductive portion. The dummy signal lines and the conductive portion are disposed in different layers. An insulating layer is disposed between the dummy signal lines and the conductive portion. A via is disposed on the insulating layer. The dummy signal line is connected to the conductive portion through the via. The dummy signal line and the conductive portion are used to form an antenna.

Abstract: The present disclosure provides a thin film transistor, a manufacturing method thereof, and a display device, and the thin film transistor of the present disclosure includes: a substrate; a gate, a gate insulating layer, an active layer, a source and drain layer sequentially provided on the substrate, and the source and drain layer is correspondingly provided at a first source contact region and a first drain contact region of the active layer. A planarization layer is provided between the gate insulating layer and the substrate, the planarization layer is in a same layer as the gate and in direct contact with the gate, and an upper surface of the planarization layer is flush with an upper surface of the gate.

Abstract: The present disclosure provides an array substrate and a display device for reducing the space occupied by the antenna inside the mobile phone, so as to reduce the thickness of the mobile phone and make the mobile phone thinner and lighter. The array substrate according to the present disclosure includes dummy signal lines and a conductive portion. The dummy signal lines and the conductive portion are disposed in different layers. An insulating layer is disposed between the dummy signal lines and the conductive portion. A via is disposed on the insulating layer. The dummy signal line is connected to the conductive portion through the via. The dummy signal line and the conductive portion are used to form an antenna.

Abstract: A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.

Abstract: The present disclosure provides an array substrate, its driving method and manufacturing method, and a display device. The array substrate includes a transistor layer arranged on a base, and a first transparent conductive layer, a first insulation layer, a second transparent conductive layer, a second insulation layer and a third transparent conductive layer sequentially arranged on the transistor layer. The first transparent conductive layer covers the transistor layer at a display area, the second transparent conductive layer includes a pattern of touch electrodes, and the third transparent conductive layer includes a pattern of pixel electrodes. Within any pixel area of the display area, the pixel electrode is connected to a pixel electrode connection end of the transistor layer through a via-hole in the first insulation layer and the second insulation layer, and the first transparent conductive layer is provided with an opening at a position corresponding to the via-hole.

Abstract: The present disclosure provides an array substrate and a display device for reducing the space occupied by the antenna inside the mobile phone, so as to reduce the thickness of the mobile phone and make the mobile phone thinner and lighter. The array substrate according to the present disclosure includes dummy signal lines and a conductive portion. The dummy signal lines and the conductive portion are disposed in different layers. An insulating layer is disposed between the dummy signal lines and the conductive portion. A via is disposed on the insulating layer. The dummy signal line is connected to the conductive portion through the via. The dummy signal line and the conductive portion are used to form an antenna.

Abstract: The present application discloses a method of fabricating a thin film transistor, including forming a semiconductor layer having a pattern corresponding to that of the active layer on a base substrate; forming a first photoresist layer on a side of the semiconductor layer distal to the base substrate; the first photoresist layer being in an area corresponding to the channel region, the second doped region, and the fourth doped region; doping a region of the semiconductor layer corresponding to the first doped region and the third doped region using the first photoresist layer as a mask plate; forming a second photoresist layer by removing a portion of the first photoresist layer to expose an initial portion of the semiconductor layer corresponding to at least a portion of the second doped region and at least a portion of the fourth doped region; and doping the initial portion of the semiconductor layer using the second photoresist layer as a mask plate.

Abstract: The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a manufacturing method thereof. The TFT includes a substrate, a p-Si active layer arranged on the substrate, and a first a-Si layer arranged on a surface of the p-Si active layer at a side adjacent to the substrate. An orthogonal projection of the p-Si active layer onto the substrate at least partially overlaps an orthogonal projection of the first a-Si layer onto the substrate.

Abstract: Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.

Abstract: The present application discloses a method of fabricating a thin film transistor, including forming a semiconductor layer having a pattern corresponding to that of the active layer on a base substrate; forming a first photoresist layer on a side of the semiconductor layer distal to the base substrate; the first photoresist layer being in an area corresponding to the channel region, the second doped region, and the fourth doped region; doping a region of the semiconductor layer corresponding to the first doped region and the third doped region using the first photoresist layer as a mask plate; forming a second photoresist layer by removing a portion of the first photoresist layer to expose an initial portion of the semiconductor layer corresponding to at least a portion of the second doped region and at least a portion of the fourth doped region; and doping the initial portion of the semiconductor layer using the second photoresist layer as a mask plate.

Abstract: The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a manufacturing method thereof. The TFT includes a substrate, a p-Si active layer arranged on the substrate, and a first a-Si layer arranged on a surface of the p-Si active layer at a side adjacent to the substrate. An orthogonal projection of the p-Si active layer onto the substrate at least partially overlaps an orthogonal projection of the first a-Si layer onto the substrate.

Abstract: Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.

Abstract: The present disclosure provides an array substrate, its driving method and manufacturing method, and a display device. The array substrate includes a transistor layer arranged on a base, and a first transparent conductive layer, a first insulation layer, a second transparent conductive layer, a second insulation layer and a third transparent conductive layer sequentially arranged on the transistor layer. The first transparent conductive layer covers the transistor layer at a display area, the second transparent conductive layer includes a pattern of touch electrodes, and the third transparent conductive layer includes a pattern of pixel electrodes. Within any pixel area of the display area, the pixel electrode is connected to a pixel electrode connection end of the transistor layer through a via-hole in the first insulation layer and the second insulation layer, and the first transparent conductive layer is provided with an opening at a position corresponding to the via-hole.