Abstract: The present disclosure relates to the field of image definition recognition, and discloses a logging image definition recognition method and device, medium and electronic equipment. The method comprises: establishing a logging image sample library comprising a plurality of logging images; acquiring actual definition information corresponding to the respective logging images; acquiring a plurality of definitions corresponding to the respective logging images; determining target weights corresponding to the respective target image definition determination algorithms according to the plurality of definitions and the actual definition information corresponding to the respective logging images; and determining a definition of a target logging image by the respective target image definition determination algorithms and the target weights corresponding to the respective target image definition determination algorithms.

Abstract: An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.

Abstract: An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.

Abstract: An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.

Abstract: An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.