Patents by Inventor Chaoling Zhang

Chaoling Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistance effect element and magnetic memory device
    Patent number: 9941468
    Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: April 10, 2018
    Assignee: Tohoku University
    Inventors: Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno, Tetsuo Endoh
  • MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
    Publication number: 20170222135
    Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction.
    Type: Application
    Filed: July 29, 2015
    Publication date: August 3, 2017
    Inventors: Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno, Tetsuo Endoh