Patents by Inventor Chaoran ZHANG

Chaoran ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107697
    Abstract: A floating gate fabrication method is disclosed. The method includes: providing a substrate, and depositing an oxide layer on the substrate; fabricating a shallow trench isolation in the substrate, a top surface of the shallow trench isolation being higher than a top surface of the oxide layer; depositing a polysilicon layer on the oxide layer and the shallow trench isolation; performing a first thermal annealing process on the polysilicon layer, thereby repairing cavities formed after the deposition of the polysilicon layer; implanting ions into the polysilicon layer; performing a second thermal annealing process on the polysilicon layer, thereby activating the implanted ions and repairing again the cavities formed after the deposition of the polysilicon layer; and planarizing the polysilicon layer to form a floating gate.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: August 31, 2021
    Assignee: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chaoran Zhang, Jun Zhou, Yun Li
  • Publication number: 20190363096
    Abstract: A floating gate fabrication method is disclosed. The method includes: providing a substrate, and depositing an oxide layer on the substrate; fabricating a shallow trench isolation in the substrate, a top surface of the shallow trench isolation being higher than a top surface of the oxide layer; depositing a polysilicon layer on the oxide layer and the shallow trench isolation; performing a first thermal annealing process on the polysilicon layer, thereby repairing cavities formed after the deposition of the polysilicon layer; implanting ions into the polysilicon layer; performing a second thermal annealing process on the polysilicon layer, thereby activating the implanted ions and repairing again the cavities formed after the deposition of the polysilicon layer; and planarizing the polysilicon layer to form a floating gate.
    Type: Application
    Filed: December 5, 2018
    Publication date: November 28, 2019
    Inventors: Chaoran ZHANG, Jun ZHOU, Yun LI