Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.

Abstract: The present disclosure provides a transparent conductive structure and a preparation method thereof, a display substrate, and a touch substrate, which belongs to the technical field of display panels. The transparent conductive structure is provided on a substrate. The method for manufacturing a transparent conductive structure includes: providing the substrate; forming a transparent conductive layer on the substrate; forming a heat insulation layer on a surface of the transparent conductive layer away from the substrate, the heat insulation layer having at least one window region exposing the transparent conductive layer; heating the transparent conductive layer for a preset time period, to form at least one insulating region on the transparent conductive layer; and removing the heat insulation layer.

Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.

Abstract: The present disclosure provides a transparent conductive structure and a preparation method thereof, a display substrate, and a touch substrate, which belongs to the technical field of display panels. The transparent conductive structure is provided on a substrate. The method for manufacturing a transparent conductive structure includes: providing the substrate; forming a transparent conductive layer on the substrate; forming a heat insulation layer on a surface of the transparent conductive layer away from the substrate, the heat insulation layer having at least one window region exposing the transparent conductive layer; heating the transparent conductive layer for a preset time period, to form at least one insulating region on the transparent conductive layer; and removing the heat insulation layer.

Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, a gate electrode, and a light shielding portion. The source electrode and the drain electrode electrically connect to the active layer, respectively, the gate electrode and the light shielding portion are on same one side of the active layer; in a direction from the source electrode to the drain electrode, the gate electrode is between the source electrode and the drain electrode, and the light shielding portion is at at least one of a group consisting of a spacing between the gate electrode and the source electrode and a spacing between the gate electrode and the drain electrode.