Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure includes a first-type semiconductor layered unit, an active layer, and a second-type semiconductor layered unit sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes quantum well layers and quantum barrier layers stacked alternately, each of the quantum well layers includes a material that is represented by InxGa1-xAs, and each of the quantum barrier layers includes a material that is represented by GaAs1-yPy, where 0.2?x?0.3, and 0?y?y0.05.

Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

Abstract: A flip-chip light emitting diode includes a light-emitting epitaxial laminated layer having a first surface, and a second surface opposing the first surface, and including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein the first surface is a roughened surface; a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer and bonded with a transparent substrate; and a first electrode and a second electrode respectively over a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A light-emitting diode includes a semiconductor epitaxial structure that has a first current spreading layer, a first transition layer, a first cladding layer, a second transition layer, a first confinement layer, an active layer, a second confinement layer, a second cladding layer, and a second current spreading layer. The first current spreading layer, the first cladding layer, and the first confinement layer independently have semiconductor materials that are different in an aluminum content. An aluminum content of the first transition layer increases in a direction from the first current spreading layer to the first cladding layer. An aluminum content of the second transition layer decreases in a direction from the first cladding layer to the first confinement layer.

Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first current spreading layer, a Inx1Ga1-x1As layer, a first cladding layer, an active layer and a second cladding layer disposed sequentially in such order from the first surface to the second surface, wherein, in the Inx1Ga1-x1As layer, 0<x1?0.08. In another aspect of the disclosure, the first current spreading layer is made of gallium arsenide, and has a thickness ranging from 2 ?m to 10 ?m and a doping concentration ranging from 1E17/cm3 to 4E18/cm3. In yet another aspect of the disclosure, a layered stack is disposed between the first current spreading layer and the first cladding layer, and includes an Inx3Ga1-x3As layer and an Aly3Ga1-y3AszP1-z layer, in which 0.02<x3?0.20, 0?y3?0.25, and 0.7<z?0.95.

Abstract: A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlxGa(1-x)InP transition unit and a p-type GaP ohmic contact layer that are sequentially disposed in such order, wherein in the p-type AlxGa(1-x)InP transition unit, 0<x?0.7. An infrared light-emitting diode including the aforementioned light-emitting epitaxial structure and a method for manufacturing the light-emitting epitaxial structure are also disclosed.

Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

Abstract: A semiconductor light-emitting component includes a semiconductor epitaxial structure that includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer includes a first current spread layer having a first and second parts which are stacked on one another. The first part has an average band gap greater than that of the second part. The second part is formed by alternately stacking first sub layers and second sub layers one on another. Each of the first sub layers has a band gap different from that of each of the second sub layers. A light-emitting device including the semiconductor light-emitting component is also disclosed.

Abstract: A chromosome recognition method based on deep learning includes the following steps: step 1, obtaining an independent chromosome image; step 2, calculating a manual feature of a chromosome; step 3, performing basic image processing on the chromosome; step 4, building a deep learning model; and step 5, predicting a type of the chromosome based on the deep learning model. By adopting a deep learning method, the chromosome recognition method can be used for recognizing the chromosome type accurately and efficiently. Compared with an existing recognition technology, the chromosome recognition method based on deep learning of the present invention has the advantages that the chromosome karyotype analysis efficiency can be effectively improved, the recognition sequencing time can be shortened, automatic classification and sequencing of chromosomes can be completely with high accuracy.

Abstract: A chromosome recognition method based on deep learning includes the following steps: step 1, obtaining an independent chromosome image; step 2, calculating a manual feature of a chromosome; step 3, performing basic image processing on the chromosome; step 4, building a deep learning model; and step 5, predicting a type of the chromosome based on the deep learning model. By adopting a deep learning method, the chromosome recognition method can be used for recognizing the chromosome type accurately and efficiently. Compared with an existing recognition technology, the chromosome recognition method based on deep learning of the present invention has the advantages that the chromosome karyotype analysis efficiency can be effectively improved, the recognition sequencing time can be shortened, automatic classification and sequencing of chromosomes can be completely with high accuracy.

Abstract: Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to Nth DBR units. The first and Nth DBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to Nth DBR units has a center reflection wavelength defined by ?+(z?1)?0.

Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.