Abstract: A method for radar detection of targets includes: determining digital data representative of the radar environment in real time, calculating a probability of existence of mock targets in a plurality of regions of the radar environment on the basis of the digital data representative of the radar environment, receiving digital data corresponding to at least one radar target, transmitted by the radar, including digital location data of the at least one radar target, calculating a reliable confidence index associated with the at least one radar target according to the probability of existence of mock targets in the region where the at least one radar target is located.

Abstract: A baseband amplifier circuit comprising a single-ended to differential converter followed by at least one boosted follower amplifier. The boosted follower amplifier comprises a first transconductance device arranged to control a first current between a first supply node and a first output node in response to a voltage at a first input node, a second transconductance device arranged to control a second current between the first output node and a second supply node in response to a voltage at a second input node, a third transconductance device arranged to control a third current between the first supply node and a second output node in response to a voltage at a third input node, and a fourth transconductance device arranged to control a fourth current between the second output node of the boosted follower amplifier and the second supply node in response to a voltage at a fourth input node.

Abstract: A baseband amplifier circuit comprising a single-ended to differential converter followed by at least one boosted follower amplifier. The boosted follower amplifier comprises a first transconductance device arranged to control a first current between a first supply node and a first output node in response to a voltage at a first input node, a second transconductance device arranged to control a second current between the first output node and a second supply node in response to a voltage at a second input node, a third transconductance device arranged to control a third current between the first supply node and a second output node in response to a voltage at a third input node, and a fourth transconductance device arranged to control a fourth current between the second output node of the boosted follower amplifier and the second supply node in response to a voltage at a fourth input node.

Abstract: A semiconductor device package comprising a circuit chip and a wafer level chip scale package is designed for reducing capacitive interactions which exist between electrically conducting portions of the circuit chip and under-bump metallization areas of the package. Such design is beneficial in particular for under-bump metallization areas which are dedicated to transferring signals having frequencies above 30 GHz.

Abstract: A semiconductor device package comprising a circuit chip and a wafer level chip scale package is designed for reducing capacitive interactions which exist between electrically conducting portions of the circuit chip and under-bump metallization areas of the package. Such design is beneficial in particular for under-bump metallization areas which are dedicated to transferring signals having frequencies above 30 GHz.