Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof, and the second supplemental patterned conductive layer at another side thereof.

Abstract: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof, and the second supplemental patterned conductive layer at another side thereof.

Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof, and the second supplemental patterned conductive layer at another side thereof.

Abstract: A microelectronic device includes a laminated mounting substrate including a die side and a land side with a surface finish layer disposed in a recess on the mounting substrate die side. An electrically conductive first plug is in contact with the surface finish layer and an electrically conductive subsequent plug is disposed on the mounting substrate land side and it is electrically coupled to the electrically conductive first plug and disposed directly below the electrically conductive first plug.

Abstract: A method of fabricating a substrate core structure, and a substrate core structure formed according to the method. The method includes: laser drilling a first set of via openings through a starting insulating layer; filling the first set of via openings with a conductive material to provide a first set of conductive vias; providing first and second patterned conductive layers on opposite sides of the starting insulating layer; providing a supplemental insulating layer onto the first patterned conductive layer; laser drilling a second set of via openings through the supplemental insulating layer; filling the second set of via openings with a conductive material to provide a second set of conductive vias; and providing a supplemental patterned conductive layer onto an exposed side of the supplemental insulating layer, the second set of conductive vias contacting the first patterned conductive layer and the supplemental patterned conductive layer at opposite sides thereof.

Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof, and the second supplemental patterned conductive layer at another side thereof.

Abstract: A method of fabricating a substrate core structure comprises: providing first and second patterned conductive layers defining openings therein on each side of a starting insulating layer; providing a first and a second supplemental insulating layers onto respective ones of a first and a second patterned conductive layer; laser drilling a set of via openings extending through at least some of the conductive layer openings of the first and second patterned conductive layers; filling the set of via openings with a conductive material to provide a set of conductive vias; and providing a first and a second supplemental patterned conductive layer onto respective ones of the first and the second supplemental insulating layers, the set of conductive vias contacting the first supplemental patterned conductive layer at one side thereof and the second supplemental patterned conductive layer at another side thereof.

Abstract: Methods of forming a microelectronic structure are described. Those methods include doping a lead free solder material with nickel, wherein the nickel comprises up to about 0.2 percent by weight of the solder material, and then applying the solder material to a substrate comprising a copper pad.

Abstract: An assembly of substrate packages interconnected with flex cables and a method of fabrication of the substrate package. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing separable inter-package flex cable connection. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.

Abstract: An embodiment of the present invention is a technique to reduce interconnect length between devices. A cavity is formed in a substrate having a substrate surface. The cavity has a depth. A first device having a device surface and a thickness is placed into the cavity. The thickness matches the depth such that the device surface is approximately planar with the substrate surface. The first device is attached to a second device via bumps on the second device.

Abstract: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

Abstract: Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight percent Cu and at least one dopant selected from the group consisting of Ag, Bi, P, and Co. Other embodiments are described and claimed.

Abstract: Electronic assemblies and solders used in electronic assemblies are described. One embodiment includes a die and a substrate, with a solder material positioned between the die and the substrate, the solder comprising at least 91 weight percent Sn, 0.4 to 1.0 weight percent Cu and at least one dopant selected from the group consisting of Ag, Bi, P, and Co. Other embodiments are described and claimed.

Abstract: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

Abstract: A method of forming collapse chip connection bumps on a semiconductor substrate is provided. The method includes providing a semiconductor substrate having a plurality of bump vias on a top surface of the semiconductor substrate and electroplating the plurality of bump vias to form a plurality of via pads on the top surface of the semiconductor substrate. The method also includes disposing a plurality of solder microballs on the top surface of the semiconductor substrate, wherein each solder microball is placed on a corresponding via pad on the semiconductor substrate and reflowing the plurality of solder microballs to form the collapse chip connection bumps on the semiconductor substrate.

Abstract: In one embodiment, the present invention includes an apparatus having a substrate with vias extending between first and second surfaces thereof, and at least one helical inductor adapted within a via, which may be formed of a conductive material. Other embodiments are described and claimed.

Abstract: An assembly of substrate packages interconnected with flex cables and a method of fabrication of the substrate package. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing separable inter-package flex cable connection. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.

Abstract: A method of fabricating a substrate core structure, and a substrate core structure formed according to the method. The method includes: laser drilling a first set of via openings through a starting insulating layer; filling the first set of via openings with a conductive material to provide a first set of conductive vias; providing first and second patterned conductive layers on opposite sides of the starting insulating layer; providing a supplemental insulating layer onto the first patterned conductive layer; laser drilling a second set of via openings through the supplemental insulating layer; filling the second set of via openings with a conductive material to provide a second set of conductive vias; and providing a supplemental patterned conductive layer onto an exposed side of the supplemental insulating layer, the second set of conductive vias contacting the first patterned conductive layer and the supplemental patterned conductive layer at opposite sides thereof.

Abstract: An assembly of substrate packages interconnected with flex cables and a method of fabrication of the substrate package. The assembly allows input/output (I/O) signals to be speedily transmitted between substrate packages via flex cable and without being routed through the motherboard. Embodiments relate to a substrate package providing separable inter-package flex cable connection. Hermetically-sealed guiding through holes are provided on the substrate package as a mechanical alignment feature to guide connection between flex cables and high speed I/O contact pads on the substrate package. Embodiments of the method of fabrication relate to simultaneously forming hermetically-sealed guiding through holes and I/O contact pads.