Patents by Inventor Charanya Gopal

Charanya Gopal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9070551
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: June 30, 2015
    Assignee: Qualcomm Incorporated
    Inventors: Benjamin John Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki, Chock H. Gan, Giridhar Nallapati, Matthew D. Youngblood, William R. Flederbach
  • Publication number: 20150064864
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Application
    Filed: November 11, 2014
    Publication date: March 5, 2015
    Inventors: Benjamin John BOWERS, James W. HAYWARD, Charanya GOPAL, Gregory Christopher BURDA, Robert J. BUCKI, Chock H. GAN, Giridhar NALLAPATI, Matthew D. YOUNGBLOOD, William R. FLEDERBACH
  • Publication number: 20140367760
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 18, 2014
    Applicant: Qualcomm Incorporated
    Inventors: Benjamin John BOWERS, James W. HAYWARD, Charanya GOPAL, Gregory Christopher BURDA, Robert J. BUCKI, Chock H. GAN, Giridhar NALLAPATI, Matthew D. YOUNGBLOOD, William R. FLEDERBACH
  • Patent number: 8782576
    Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: July 15, 2014
    Assignee: QUALCOMM Incorporated
    Inventors: Benjamin John Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki, Chock H. Gan, Giridhar Nallapati, Matthew D. Youngblood, William R. Flederbach