Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: Various methods and systems are provided for imaging a sample under low vacuum with a charged particle beam. A magnetic field is provided in a detection area of the detector. Gas and plasma are provided in the detection area while detecting charged particles emitted from the sample. Sample image is formed based on the detected charged particles.

Abstract: Various methods and systems are provided for imaging a sample under low vacuum with a charged particle beam. A magnetic field is provided in a detection area of the detector. Gas and plasma are provided in the detection area while detecting charged particles emitted from the sample. Sample image is formed based on the detected charged particles.

Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: Beam-induced deposition decomposes a precursor at precise positions on a surface. The surface is processed to provide linker groups on the surface of the deposit, and the sample is processed to attach nano-objects to the linker groups. The nano-objects are used in a variety of application. When a charged particle beam is used to decompose the precursor, the charged particle beam can be used to form an image of the surface with the nano-objects attached.

Abstract: Beam-induced deposition decomposes a precursor at precise positions on a surface. The surface is processed to provide linker groups on the surface of the deposit, and the sample is processed to attach nano-objects to the linker groups. The nano-objects are used in a variety of application. When a charged particle beam is used to decompose the precursor, the charged particle beam can be used to form an image of the surface with the nano-objects attached.

Abstract: Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

Abstract: A method of depositing a material on a work piece surface. The method comprising providing a deposition precursor gas at the work piece surface; providing a purification compound including a nitrogen-containing compound at the work piece surface; and directing a beam toward a local region on the work piece surface, the beam causing decomposition of the precursor gas to fabricate a deposit on the work piece surface, the deposited material including a contaminant, the purification compound causing a reduction in the concentration of the contaminant and providing a deposited material that includes less contamination than a material deposited using the same methodology but without using a purification compound.

Abstract: A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas.