Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract: The invention provides a UV below 200 nm lithography method. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of alkaline earth cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the cubic fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals and forming optical element therefrom.

Abstract: The present invention relates generally to UV (ultraviolet) photosensitive bulk glass, and particularly to batch meltable alkali boro-alumino-silicate glasses. The photosensitive bulk glass of the invention exhibits photosensitivity to UV wavelengths below 250 nm. The photosensitivity of the alkali boro-alumino-silicate bulk glass to UV wavelengths below 250 nm provide for the making of refractive index patterns in the glass. With a radiation source below 250 nm, such as a laser, refractive index patterns are formed in the glass. The inventive photosensitive optical refractive index pattern forming bulk glass allows for the formation of patterns in glass and devices which utilize such patterned glass.

Abstract: The invention provides a ≧4 kHz repetition rate fluoride excimer laser system for producing an UV wavelength <200 nm, and in particular an argon fluoride excimer laser system for producing a UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber also includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light at a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: The invention relates to optical glass having improved initial transmittance, formed by subjecting the glass to a hydrogen and/or deuterium treatment at a temperature, and for a duration of time sufficient to diffuse the hydrogen and/or deuterium into the glass.

Abstract: Optical members, methods of manufacturing optical members and predicting the performance of optical members in optical systems using excimer lasers are disclosed. The methods can be used in designing optical systems using excimer lasers. The methods include measuring the wavefront change of samples of glass at the operating wavelength of the optical system.

Abstract: The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing <200-nm light, providing a plurality of mixed calcium strontium cubic fluoride crystal optical elements, with the fluoride crystals comprised of a combination of calcium strontium cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the lithography pattern and projecting the lithography pattern with the fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals, optical element blanks thereof and optical lithography elements.

Abstract: The invention provides a UV below 200 mm lithography method. The invention includes providing a below 200 mm radiation source for producing <200-nm light, providing a plurality of mixed cubic flouride crystal optical elements, with the fluoride crystals comprised of a combination of alkaline earth cations having different optical polarizabilities such as to produce an overall isotropic polarizability which minimizes the fluoride crystal spatial dispersion below 200 nm, transmitting <200-nm light through the cubic fluoride crystal optical elements, forming a lithography pattern with the light, reducing the litographic patter and projecting the lithography pattern with the cubic fluoride crystal optical elements onto a UV radiation sensitive lithography printing medium to form a printed lithographic pattern. The invention includes making the mixed fluoride crystals and forming optical element thereform.

Abstract: The invention provides a method of making a <194 nm wavelength calcium fluoride crystal optical lithography element for transmitting wavelengths less than about 194 nm along an optical axis with minimal birefringence by providing an optical element optical calcium fluoride crystal with an input face {100} crystal plane and forming the input face {100} crystal plane into an optical lithography element surface of an optical lithography element having an optical axis, with the optical axis aligned with a <100> crystal direction of the optical calcium fluoride crystal. In a preferred embodiment, the below 194 nm transmitting optical element is a <100>oriented calcium fluoride lens. In a preferred embodiment, the below 194 nm transmitting optical element is a <100> oriented calcium fluoride beam splitter.

Abstract: The invention relates to fused silica having low compaction under high energy irradiation, particularly adaptable for use in photolithography applications.

Abstract: The present invention relates generally to UV (ultraviolet) photosensitive bulk glass, and particularly to batch meltable alkali boro-alumino-silicate and germanosilicate glasses. The photosensitive bulk glass of the invention exhibits photosensitivity to UV wavelengths below 300 nm.

Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

Abstract: The invention provides a method of making ≧4 kHz repetition rate argon fluoride excimer laser crystal optics. The method includes providing a magnesium fluoride crystal solid precursor, nonmetallically crushing the magnesium fluoride solid precursor to provide a crushed low metal contaminant magnesium fluoride feedstock, providing a magnesium fluoride crystal growth crucible, loading the crushed magnesium fluoride feedstock into the crystal growth crucible, melting the loaded crushed magnesium fluoride feedstock to provide a precrystalline magnesium fluoride melt, growing an oriented magnesium fluoride crystal from the precrystalline magnesium fluoride melt, cooling the grown magnesium fluoride crystal to provide a magnesium fluoride laser optical crystal and forming the magnesium fluoride laser crystal into an excimer laser crystal optic for transmitting a high repetition rate (≧4 kHz repetition rate) excimer laser output.

Abstract: The invention provides a ≧4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract: The invention relates to optical glass having improved initial transmittance, formed by subjecting the glass to a hydrogen and/or deuterium treatment at a temperature, and for a duration of time sufficient to diffuse the hydrogen and/or deuterium into the glass.

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

Abstract: The present invention relates generally to UV (ultraviolet) photosensitive bulk glass, and particularly to batch meltable alkali boro-alumino-silicate glasses. The photosensitive bulk glass of the invention exhibits photosensitivity to UV wavelengths below 300 nm. The photosensitivity of the alkali boro-alumino-silicate bulk glass to UV wavelengths below 300 nm provide for the making of refractive index patterns in the glass. With a radiation source below 300 nm, such a laser, refractive index patterns are formed in the glass. The inventive photosensitive optical refractive index pattern forming bulk glass allows for the formation of patterns in glass and devices which utilize such patterned glass.