Abstract: A saliency mapping method includes displaying video clip imagery of an organ in a display of a computer and submitting the imagery to a neural network trained to produce a probability of an existence of a physical feature of the organ. In response, the probability is received along with a pixel-wise mapping of dispositive pixels in the imagery resulting in the probability. Variations of the imagery are then repeatedly resubmitted to the neural network, each including a change to one or more of the pixels in the imagery. Thereafter, for each resubmission, a change is measured in the probability and then correlated to the changed pixels. Finally, a graphical indicator is overlain on the display of the imagery corresponding to each of the pixels determined through the repeated resubmission to be dispositive based upon a threshold measured change in probability.

Abstract: A saliency mapping method includes displaying video clip imagery of an organ in a display of a computer and submitting the imagery to a neural network trained to produce a probability of an existence of a physical feature of the organ. In response, the probability is received along with a pixel-wise mapping of dispositive pixels in the imagery resulting in the probability. Variations of the imagery are then repeatedly resubmitted to the neural network, each including a change to one or more of the pixels in the imagery. Thereafter, for each resubmission, a change is measured in the probability and then correlated to the changed pixels. Finally, a graphical indicator is overlain on the display of the imagery corresponding to each of the pixels determined through the repeated resubmission to be dispositive based upon a threshold measured change in probability.

Abstract: The present invention provides methods for determining the presence of oxidizing salts. According to the current invention, analyte is collected on a swipe and subsequently heated to a temperature sufficient to release a detectible vapor phase component of the oxidizing salt. The vapor phase component passes reacts with a pH sensitive molecule. Reaction of the vapor phase product with the pH sensitive molecule produces a detectible change in response intensity.

Abstract: The present invention provides methods for determining the presence of oxidizing salts. According to the current invention, analyte is collected on a swipe and subsequently heated to a temperature sufficient to release a detectible vapor phase component of the oxidizing salt. The vapor phase component passes reacts with a pH sensitive molecule. Reaction of the vapor phase product with the pH sensitive molecule produces a detectible change in response intensity.

Abstract: The apparatus includes a fermentation tank of a type including a cylindrical tank shell and a downwardly-directed frustoconical tank bottom affixed to a bottom edge of the cylindrical tank shell. An upwardly-directed frustoconical support positioned below the cylindrical tank is configured to have a centrally located aperture for receiving and supporting a lower portion of the tank bottom. The tank includes an outer cylindrical sleeve configured to receive the cylindrical tank shell, tank bottom, and support to form a tank assembly, wherein the assembly includes an annular gap between the tank shell and sleeve, and a cavity between the sleeve, tank bottom, and support. Rigid foam insulation is then filled within the annular gap and cavity to provide structural rigidity to the assembly as well as insulative properties to maintain the stored liquid at a desired temperature.

Abstract: A guard bracket including a first portion, a second portion, and a third portion. The first portion is for attaching to an existing attachment point hardware of an exposed return roller of a conveyor belt system to facilitate installation of the guard bracket on the conveyor belt system. The second portion extends from the first portion, and is for preventing accumulation of debris between the guard bracket and the exposed return roller of the conveyor belt system. The third portion extends from the second portion, and in combination with the second portion, are for capturing an end of the exposed return roller of the conveyor belt system when the end of the exposed return roller of the conveyor belt system becomes disengaged and free-falling, even when the exposed return roller of the conveyor belt system is still spinning.

Abstract: The present invention provides methods for determining the presence of oxidizing salts. According to the current invention, analyte is collected on a swipe and subsequently heated to a temperature sufficient to release a detectable vapor phase component of the oxidizing salt. The vapor phase component passes reacts with a pH sensitive molecule. Reaction of the vapor phase product with the pH sensitive molecule produces a detectable change in response intensity.

Abstract: A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.

Abstract: A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.

Abstract: The present invention provides methods for determining the presence of oxidizing salts. According to the current invention, analyte is collected on a swipe and subsequently heated to a temperature sufficient to release a detectible vapor phase component of the oxidizing salt. The vapor phase component passes reacts with a pH sensitive molecule. Reaction of the vapor phase product with the pH sensitive molecule produces a detectible change in response intensity.

Abstract: An integrated passive device system is disclosed including forming a first dielectric layer over a semiconductor substrate, depositing a metal capacitor layer on the first dielectric layer, forming a second dielectric layer over the metal capacitor layer, and depositing a metal layer over the second dielectric layer for forming the integrated capacitor, an integrated resistor, an integrated inductor, or a combination thereof.

Abstract: A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.

Abstract: A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.

Abstract: The present invention provides improved preconcentrator media suitable for selectively desorbing captured analytes. Additionally, the current invention provides improved methods for concentrating trace quantities of analytes to a degree suitable for detection by a detecting device.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is deposited over the substrate, first conductive layer and high resistivity layer. A portion of the dielectric layer, high resistivity layer, and first conductive layer forms a capacitor stack. A first passivation layer is formed over the dielectric layer. A second conductive layer is formed over the capacitor stack and a portion of the first passivation layer. A first opening is etched in the dielectric layer to expose a surface of the high resistivity layer. A third and fourth conductive layer is deposited over the first opening in the dielectric layer and a portion of the first passivation layer.

Abstract: A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. In the case of copper, the coil structures have a height greater than 5 micrometers. The first, second, and third coil structures are arranged in rounded or polygonal pattern horizontally across the substrate with a substantially flat vertical profile.

Abstract: A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. A thin film capacitor is formed within the semiconductor device by a first metal plate, dielectric layer over the first metal plate, and second and third electrically isolated metal plates opposite the first metal plate. The terminals are located on the same side of the capacitor.

Abstract: An integrated circuit stacking system is provided including fabricating an integrated passive device including: providing a semiconductor substrate, forming an integrated inductor, a resistor block, or an integrated capacitor integrated on the semiconductor substrate, and forming contact pads, on the semiconductor substrate, coupled to the integrated inductor, the resistor block, or the integrated capacitor; positioning an integrated circuit die for maintaining an inductor spacing; mounting the integrated circuit die on the integrated passive device; and encapsulating the integrated circuit die and the integrated passive device.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is deposited over the substrate, first conductive layer and high resistivity layer. A portion of the dielectric layer, high resistivity layer, and first conductive layer forms a capacitor stack. A first passivation layer is formed over the dielectric layer. A second conductive layer is formed over the capacitor stack and a portion of the first passivation layer. A first opening is etched in the dielectric layer to expose a surface of the high resistivity layer. A third and fourth conductive layer is deposited over the first opening in the dielectric layer and a portion of the first passivation layer.