Abstract: A detector device for detecting incident radiation at particular wavelengths is disclosed. The device includes a base layer comprising a substrate. A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer disposed on a membrane in substantially parallel relationship to the substrate. A detector is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device and different methods of fabricating the same are also disclosed.

Abstract: A detector device (75) for detecting incident radiation at particular wavelengths is disclosed. The device (75) includes a base layer comprising a substrate (77). A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer (83) disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer (91) disposed on a membrane (89) in substantially parallel relationship to the substrate (77). A detector (79) is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector (79) within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device (75) and different methods of fabricating the same are also disclosed.

Abstract: A tunable cavity resonator for filtering radiation in the optical and IR wavelengths and a method for fabricating same. The resonator having a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also including a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector. A first reflector layer is deposited on the substrate to form the one reflector. A sacrificial layer having a high etch selectivity for releasing the membrane in a suspended and spaced relationship from the one reflector is formed on the first reflector layer. The membrane is deposited on the sacrificial layer using a deposition technique characterised by providing the required intrinsic stress in the membrane.

Abstract: An automatically passivated n-p junction is formed from a p-type body containing Group II and Group VI elements, one of which is mercury. A passivation layer is then formed having at least one window provided therein on a surface of the p-type body. The p-type body is then subjected to a reactive ion etching process using the passivation layer as a mask to form the n-p junction. Ohmic contacts are then formed on the n-type and p-type regions. The method may be extended to form an array of n-p junctions on a semiconductor body having a plurality of p-type material layers.