Abstract: The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.

Abstract: A method and apparatus for determining the synchronicity of a rotary platen (22) in a vacuum deposition chamber (24). A light source (64) projects a highly collimated light beam (66) onto the rotating platen (22), thereby tracing a circular swept path (67). The swept path (67) passes alternately through samples (20) on the platen (22) and intervening webs (58, 60). The samples (20) are significantly more reflective than the webs (58, 60). The platen (22) includes an asymmetry feature (60) along the swept path (67). A detector (62) measures light signals reflected from the platen (22) along the swept path (67), and generates a unique signal upon encountering the asymmetry feature (60). A microcontroller generates a trigger pulse synchronized to the unique signal.

Abstract: A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 22 for blue and white LEDs. The temperature is determined in realtime as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.

Abstract: A method and apparatus (20) used in connection with the manufacture of thin film semiconductor materials (26) deposited on generally transparent substrates (28), such as photovoltaic cells, for monitoring a property of the thin film (26), such as its temperature, surface roughness, thickness and/or optical absorption properties. A spectral curve (44) derived from diffusely scattered light (34, 34?) emanating from the film (26) reveals a characteristic optical absorption (Urbach) edge. Among other things, the absorption edge is useful to assess relative surface roughness conditions between discrete material samples (22) or different locations within the same material sample (22). By comparing the absorption edge qualities of two or more spectral curves, a qualitative assessment can be made to determine whether the surface roughness of the film (26) may be considered of good or poor quality.

Abstract: A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (?) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.

Abstract: A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 20 for blue and white LEDs. The temperature is determined in real-time as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.

Abstract: The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.

Abstract: The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.

Abstract: A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (?) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.

Abstract: The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.

Abstract: Apparatus for quantitatively measuring the curvature and/or relative tilt of large surfaces wherein a small array of parallel laser beams, each separated by a known distance, reflect from the surface of a sample and fall upon a feedback controlled front-surface steering mirror to a detector that measures both the change in separation of the reflected beams and the spatial translation of the entire array on the detector. The sample surface is translated beneath or in front of the fixed laser array by means of a computer controlled stage or other apparatus to create a 1-dimensional line scan or 2-dimensional map of both bow and relative tilt of the sample surface. A computer-driven, feedback-controlled steering mirror compensates for varying sample tilt by precisely realigning the reflected laser array onto the detector as the sample is translated.