Patents by Inventor Charles Allan Stibitz

Charles Allan Stibitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dichlorosilane compensating control strategy for improved polycrystalline silicon growth
    Patent number: 10851459
    Abstract: A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: December 1, 2020
    Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
    Inventors: John Victor Bucci, Mark Richard Stachowiak, Charles Allan Stibitz
  • DICHLOROSILANE COMPENSATING CONTROL STRATEGY FOR IMPROVED POLYCRYSTALLINE SILICON GROWTH
    Publication number: 20170058403
    Abstract: A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline
    Type: Application
    Filed: August 22, 2016
    Publication date: March 2, 2017
    Inventors: John Victor Bucci, Mark Richard Stachowiak, Charles Allan Stibitz