Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and a planar lightwave circuits (PLCs).

Abstract: A method of focusing includes irradiating an object by directing radiation output by a radiating source through an objective lens, measuring a first intensity of reflected radiation that is reflected from the object, adjusting a distance between the objective lens and the object, measuring a second intensity of reflected radiation, and analyzing the first intensity of reflected radiation and the second intensity of reflected radiation to determine a focal distance between the objective lens and the object. The distance between the objective lens and the object is adjusted to the focal distance and the irradiating intensity is increased to mark the object. In another example, measuring the first intensity of reflected radiation is performed by directing reflected radiation from the object through the objective lens, a beam splitter, a focusing lens, and a pinhole and onto a sensor that outputs a signal indicative of sensed radiation intensity.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and an interface having removably coupled first side and second side. The first side includes a lens array optically coupled to a SiP chip and the second side includes a connector having a plurality of planar lightwave circuits (PLCs) optically coupled to another lens array.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and an interface having removably coupled first side and second side. The first side includes a lens array optically coupled to a SiP chip and the second side includes a connector having a plurality of planar lightwave circuits (PLCs) optically coupled to another lens array.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and a planar lightwave circuits (PLCs).

Abstract: A method of focusing includes irradiating an object by directing radiation output by a radiating source through an objective lens, measuring a first intensity of reflected radiation that is reflected from the object, adjusting a distance between the objective lens and the object, measuring a second intensity of reflected radiation, and analyzing the first intensity of reflected radiation and the second intensity of reflected radiation to determine a focal distance between the objective lens and the object. The distance between the objective lens and the object is adjusted to the focal distance and the irradiating intensity is increased to mark the object. In another example, measuring the first intensity of reflected radiation is performed by directing reflected radiation from the object through the objective lens, a beam splitter, a focusing lens, and a pinhole and onto a sensor that outputs a signal indicative of sensed radiation intensity.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and an interface having removably coupled first side and second side. The first side includes a lens array optically coupled to a SiP chip and the second side includes a connector having a plurality of planar lightwave circuits (PLCs) optically coupled to another lens array.

Abstract: A switch module includes a switch integrated circuit (IC), an InP chip, and a planar lightwave circuit (PLC). The InP chip may include a plurality of light sources, an optical splitter, and a plurality of modulators.

Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Abstract: A switch module includes a switch integrated circuit (IC), an InP chip, and a planar lightwave circuit (PLC). The InP chip may include a plurality of light sources, an optical splitter, and a plurality of modulators.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and an interface having removably coupled first side and second side. The first side includes a lens array optically coupled to a SiP chip and the second side includes a connector having a plurality of planar lightwave circuits (PLCs) optically coupled to another lens array.

Abstract: A switch module includes a switch integrated circuit (IC), a silicon photonics chips, and a planar lightwave circuits (PLCs).

Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.

Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.