Patents by Inventor Charles Bailley

Charles Bailley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic packages with integral heat spreaders
    Patent number: 12243799
    Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: March 4, 2025
    Assignee: NAVITAS SEMICONDUCTOR LIMITED
    Inventors: Charles Bailley, George Chu, Daniel M. Kinzer
  • Electronic packages with integral heat spreaders
    Patent number: 12199004
    Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: January 14, 2025
    Assignee: Navitas Semiconductor Limited
    Inventors: Charles Bailley, George Chu, Daniel M. Kinzer
  • ELECTRONIC PACKAGES WITH INTEGRAL HEAT SPREADERS
    Publication number: 20220310476
    Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
    Type: Application
    Filed: May 6, 2022
    Publication date: September 29, 2022
    Applicant: Navitas Semiconductor Limited
    Inventors: Charles Bailley, George Chu, Daniel M. Kinzer
  • ELECTRONIC PACKAGES WITH INTEGRAL HEAT SPREADERS
    Publication number: 20220310475
    Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 29, 2022
    Applicant: Navitas Semiconductor Limited
    Inventors: Charles Bailley, George Chu, Daniel M. Kinzer