Abstract: A modular semiconductor wafer processing system comprises a chamber with a wafer support and gas manifold structure that supplies reactive gases through a showerhead delivery system to one side of a wafer-being-processed and that exhausts both the reactive gases and a non-reactive gas flow. The other side of the wafer is protected from the reactive gases by evenly delivering the non-reactive gases from a platen close to the wafer. The gap between the wafer and platen, and the choice of non-reactive gas and its flow rate are adjusted to optimize the protection afforded to the wafer's one side while still allowing, for example, the stripping of a silicon nitride film from the wafer's other side.

Abstract: A modular semiconductor wafer processing system comprises a plurality of detachable process reactors and other types of generators that can be quick-clamped to any of several ports on the lid of a circular wafer handling chamber. A multiple-spoke single-axis rigid-arm transfer carousel centrally located within the circular wafer handling chamber has access to the respective process areas beneath each port in the lid. A set of independent cylindrical rings are provided to rise up from the floor of the circular wafer handling chamber to contact and seal against the lid to isolate each of the process stations. The multiple-spoke single-axis rigid-arm transfer carousel is automatically positioned out of the way before the cylindrical rings are raised and sealed.

Abstract: A semiconductor wafer processing carousel comprises an elevator chamber that accepts cassettes loaded with semiconductor wafers through a removable vacuum lock door, an elevator platform on which the cassettes ride up and down, an elevator drive to automatically position the elevator platform, a lid and a circular wafer handling chamber with an anteroom chamber connection to the elevator chamber. A double-axis wafer transfer arm provides for linear transfer through the anteroom chamber of selected wafers between the cassettes and a first pre-heating and cool-down process station within the circular wafer handling chamber. A multiple-spoke single-axis rigid-arm transfer carousel is centrally located within the circular wafer handling chamber and has access to multiple process stations. A set of independent cylindrical rings are positioned to rise up from the handling chamber bottom of the circular wafer handling chamber to contact and seal against the lid to isolate each of the process stations.

Abstract: A short-coupled-path extender comprises a two-inch thick housing that inserts as a spacer between a plasma source and a vacuum chamber in various kinds of semiconductor processing equipment. The spacer housing is generally constructed of aluminum and is thermally well-connected to the vacuum chamber and its liquid cooling system to dispose of the heat it collects from the plasma source flow. The plasma source bolts up to a central inlet port on the spacer housing that leads to a first quartz-lined antechamber within. The plasma source flow encounters a traverse metal wall at the back of the first antechamber and is forced to flow radially outward to a system of small outer ports that connect to a second quartz-lined antechamber. The plasma source flow then collects back together and exits the second antechamber through a central outlet port that bolts up to the plasma source seat on the vacuum chamber.

Abstract: A modular semiconductor wafer processing system comprises a plurality of detachable process reactors and other types of generators that can be attached to any of several ports on the lid of a circular wafer handling chamber. A multiple-spoke single-axis rigid-arm transfer carousel centrally located within the circular wafer handling chamber has access to the respective process areas beneath each port in the lid. A set of independent cylindrical sleeves with sealing rings are provided to rise up from the floor of the circular wafer handling chamber to contact and seal against the lid to isolate each of the process stations. The multiple-spoke single-axis rigid-arm transfer carousel is automatically positioned out of the way before the cylindrical rings are raised and sealed.

Abstract: An apparatus and method for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a single wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 100 atmospheres (1,500 psi) and at a temperature of 900.degree. C., approximately 2.66 minutes are required to grow a 5,000.ANG. oxide layer in a steam environment. The system can reach these operating conditions from ambient in approximately 30 seconds and depressurization and cool down require approximately 60 to 90 seconds. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure. A pressure equalizing scheme is used to keep the fluid pressure of the process chamber and the pressure of the fluid pressure vessel substantially the same.

Abstract: An apparatus and method for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a single wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 100 atmospheres (1,500 psi) and at a temperature of 900.degree. C., approximately 2.66 minutes are required to grow a 5,000.ANG. oxide layer in a steam environment. The system can reach these operating conditions from ambient in approximately 30 seconds and depressurization and cool down require approximately 60 to 90 seconds. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure. A pressure equalizing scheme is used to keep the fluid pressure of the process chamber and the pressure of the fluid pressure vessel substantially the same.

Abstract: A method and apparatus for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a batch wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 10 to 25 atmospheres and at a temperature of 600.degree. C. to 1100.degree. C., approximately 90.0 minutes are required to grow a 5,000 .ANG. oxide layer on about 50 wafers in a steam environment. The system can reach these operating conditions from ambient in approximately 17 minutes and depressurization and cool down require approximately 22 minutes. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam or oxygen. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure.