Patents by Inventor Charles C. Chung

Charles C. Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7115437
    Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: October 3, 2006
    Assignee: Georgia Tech Research Corporation
    Inventors: Mark G. Allen, Charles C. Chung
  • Patent number: 6809392
    Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: October 26, 2004
    Assignee: Georgia Tech Research Corporation
    Inventors: Mark G. Allen, Charles C. Chung
  • Publication number: 20030153115
    Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 14, 2003
    Inventors: Mark G. Allen, Charles C. Chung
  • Patent number: 6544811
    Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
    Type: Grant
    Filed: January 19, 2001
    Date of Patent: April 8, 2003
    Assignee: Georgia Tech Research Corporation
    Inventors: Mark G. Allen, Charles C. Chung
  • Publication number: 20010006248
    Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
    Type: Application
    Filed: January 19, 2001
    Publication date: July 5, 2001
    Applicant: Georgia Tech Research Corporation
    Inventors: Mark G. Allen, Charles C. Chung