Patents by Inventor Charles C. Goldsmith
Charles C. Goldsmith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9379007Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.Type: GrantFiled: May 1, 2013Date of Patent: June 28, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Charles L. Arvin, Kenneth Bird, Charles C. Goldsmith, Sung K. Kang, Minhua Lu, Clare J. McCarthy, Eric D. Perfecto, Srinivasa S. N. Reddy, Krystyna W. Semkow, Thomas A. Wassick
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Publication number: 20130249066Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.Type: ApplicationFiled: March 23, 2012Publication date: September 26, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: CHARLES L. ARVIN, KENNETH BIRD, CHARLES C. GOLDSMITH, SUNG K. KANG, MINHUA LU, CLARE JOHANNA MCCARTHY, ERIC DANIEL PERFECTO, SRINIVASA S.N. REDDY, KRYSTYNA WALERIA SEMKOW, THOMAS ANTHONY WASSICK
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Publication number: 20130252418Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.Type: ApplicationFiled: May 1, 2013Publication date: September 26, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: CHARLES L. ARVIN, KENNETH BIRD, CHARLES C. GOLDSMITH, SUNG K. KANG, MINHUA LU, CLARE J. MCCARTHY, ERIC D. PERFECTO, SRINIVASA S.N. REDDY, KRYSTYNA W. SEMKOW, THOMAS A. WASSICK
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Patent number: 8420537Abstract: Recrystallization and grain growth of metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 400° C., for example, for short anneal times of five to sixty minutes by forming a metal stress locking layer on the Cu before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the Cu by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing leaving the Cu interconnect with low stress and improved grain size and texture.Type: GrantFiled: May 28, 2008Date of Patent: April 16, 2013Assignee: International Business Machines CorporationInventors: Kaushik Chanda, Ronald G. Filippi, Charles C. Goldsmith, Ping-Chuan Wang, Chih-Chao Yang
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Patent number: 7875806Abstract: Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.Type: GrantFiled: February 16, 2010Date of Patent: January 25, 2011Assignee: International Business Machines CorporationInventors: Muta G. Farooq, Charles C. Goldsmith
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Publication number: 20100139958Abstract: Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.Type: ApplicationFiled: February 16, 2010Publication date: June 10, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mukta G. Farooq, Charles C. Goldsmith
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Patent number: 7731077Abstract: Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.Type: GrantFiled: June 7, 2007Date of Patent: June 8, 2010Assignee: International Business Machines CorporationInventors: Mukta G Farooq, Charles C Goldsmith
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Publication number: 20090297759Abstract: Recrystallization and grain growth of metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 400° C., for example, for short anneal times of five to sixty minutes by forming a metal stress locking layer on the Cu before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the Cu by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing leaving the Cu interconnect with low stress and improved grain size and texture.Type: ApplicationFiled: May 28, 2008Publication date: December 3, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kaushik Chanda, Ronald G. Filippi, Charles C. Goldsmith, Ping-Chuan Wang, Chih-Chao Yang
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Patent number: 7287685Abstract: Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.Type: GrantFiled: September 20, 2004Date of Patent: October 30, 2007Assignee: International Business Machines CorporationInventors: Mukta G. Farooq, Charles C. Goldsmith
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Patent number: 7276296Abstract: A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.Type: GrantFiled: June 28, 2005Date of Patent: October 2, 2007Assignee: International Business Machines CorporationInventors: Emanuel I. Cooper, Charles C. Goldsmith, Stephen Kilpatrick, Carmen M. Mojica, Henry A. Nye, III
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Patent number: 7037559Abstract: A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.Type: GrantFiled: May 1, 2003Date of Patent: May 2, 2006Assignee: International Business Machines CorporationInventors: Emanuel I. Cooper, Charles C. Goldsmith, Stephen Kilpatrick, Carmen M. Mojica, Henry A. Nye, III
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Publication number: 20040219384Abstract: A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.Type: ApplicationFiled: May 1, 2003Publication date: November 4, 2004Applicant: International Business Machines CorporationInventors: Emanuel I. Cooper, Charles C. Goldsmith, Stephen Kilpatrick, Carmen M. Mojica, Henry A. Nye
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Patent number: 6805974Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling &dgr;T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.Type: GrantFiled: February 15, 2002Date of Patent: October 19, 2004Assignee: International Business Machines CorporationInventors: Won K. Choi, Charles C. Goldsmith, Timothy A. Gosselin, Donald W. Henderson, Sung K. Kang, Karl J. Puttlitz, Sr., Da-Yuan Shih
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Patent number: 6638374Abstract: A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.Type: GrantFiled: January 16, 2002Date of Patent: October 28, 2003Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Charles C. Goldsmith, Jeffery L. Hurd, Suryanarayana Kaja, Michele S. Legere, Eric D. Perfecto
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Publication number: 20030156969Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling &dgr;T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.Type: ApplicationFiled: February 15, 2002Publication date: August 21, 2003Applicant: International Business Machines CorporationInventors: Won K. Choi, Charles C. Goldsmith, Timothy A. Gosselin, Donald W. Henderson, Sung K. Kang, Karl J. Puttlitz, Da-Yuan Shih
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Publication number: 20020129879Abstract: A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.Type: ApplicationFiled: January 16, 2002Publication date: September 19, 2002Inventors: Patrick W. DeHaven, Charles C. Goldsmith, Jeffery L. Hurd, Suryanarayana Kaja, Michele S. Legere, Eric D. Perfecto, S. Kathleen Reese
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Patent number: 6361627Abstract: A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100°C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.Type: GrantFiled: May 11, 2000Date of Patent: March 26, 2002Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Charles C. Goldsmith, Jeffery L. Hurd, Suryanarayana Kaja, Michele S. Legere, Eric D. Perfecto
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Patent number: 6126761Abstract: A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100.degree. C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20.degree. C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.Type: GrantFiled: June 10, 1998Date of Patent: October 3, 2000Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Charles C. Goldsmith, Jeffrey L. Hurd, deceased, Suryanarayana Kaja, Michele S. Legere, Eric D. Perfecto