Abstract: A holographic energy system is operable to generate an output wavefront according to a complex amplitude function. The holographic energy system includes a continuous three-dimensional energy medium, an array of energy devices configured to output energy to interact with the continuous three-dimensional energy medium to define a hologram therein, and an electromagnetic (EM) energy source positioned to output coherent EM energy that is incident on the hologram in the continuous three-dimensional energy medium to generate an output wavefront.

Abstract: The embodied invention is a foldable aerodynamic drag reducing plate assembly that is installed on shipping container ends. The drag reducing plates are in two parts and designed to incorporate hinges and attaching components specifically for the spacing and position of corner lifting holes that are part of a standard container shipping car. The drag reducing plates include locking bars that provide stability when a train is moving at high speed. Also, connecting clips, stiffening channels, or hinges are used to combine two halves of the drag reducing plate design into a single, stiffened unit.

Abstract: The embodied invention is a foldable aerodynamic drag reducing plate assembly that is installed on shipping container front ends. The drag reducing plates incorporate hinges and attaching components specifically designed for the spacing and position of vertical rods that are part of a standard shipping container. The drag reducing plates include locking bars that provide stability against air wind when a train moves at high speeds. Also, connecting clips, stiffening channels, or hinges are used to combine the drag reducing plate elements design into a single unit.

Abstract: A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 çm, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10C./sec.

Abstract: This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: This invention is directed to a novel a single crystal silicon wafer. The wafer comprises: (a) two major generally parallel surfaces (ie., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: According to the present invention an impure liquid containing ethylene glycol or propylene glycol, lower carboxylate esters of the glycol, water, carboxylic acid and glycol-azeotroping agent is treated for removal of substantially all of said glycol-azeotroping agent by a process which comprises distilling the impure liquid in a distillation zone to form an overheads product comprising water and glycol-azeotroping agent and a bottoms product comprising the glycol, esters and carboxylic acid, which is substantially free of said glycol-azeotroping agent, said bottoms product containing water in an amount of at least about 1 weight percent of the amount of water passed to said distillation zone with said impure liquid.

Abstract: Ethylene glycol or 1,2-propylene glycol contained in mixtures with lower carboxylate esters of the glycol are separated from such mixtures by fractional distillation of the mixtures with the addition to the lower portion of the distillation zone of aqueous formic acid and/or acetic acid.