Abstract: The disclosed technology generally relates to an electro-optical device based on III-V and/or II-VI and/or group IV semiconductors. In one aspect, the electro-optical device includes a support region and a ridge structure extending from the support region. The ridge structure includes a bottom region provided on the support region and having at least one layer of a first semiconductor material that has a first conductivity type. The ridge structure also includes an intermediate region provided on the bottom region and having an active region. The intermediate region further includes at least one layer of a second semiconductor material, and has a trapezoid-shaped top region with a top surface, side surfaces, and inclined surfaces connecting the top surface to the side surfaces.

Abstract: According to an aspect of the present inventive concept there is provided a light emitting unit, for emitting laser light at a laser wavelength, arranged on a planar surface of a substrate. The unit comprises a first reflective element to reflect light at the laser wavelength, a gain element to amplify the light, and a second reflective element to partially reflect the light, and to emit the laser light. The elements form a stack of layers integrated onto the planar surface. Each layer is parallel with the planar surface, and the gain element is arranged between the first and second reflective elements. The unit comprises a beam shaping element integrated with the stack. The beam shaping element is configured to shape the emitted laser light. The beam shaping element comprises a plurality of structures spaced apart in a direction of an extension of a layer of the beam shaping element. A size of the structures and/or a distance between adjacent structures is smaller than the laser wavelength.

Abstract: An optical device including a waveguide grating is disclosed. The optical device may be used as an optical cavity for a laser device, for instance, of an integrated laser device for light detection and ranging (Lidar) applications. In one aspect, the optical device includes a waveguide grating for guiding light, a heating layer provided beneath or above the waveguide grating, and two or more contacts for passing a current through the heating layer, to generate heat in the heating layer. The heating layer is thermally coupled to the waveguide grating and is optically decoupled from the waveguide grating.

Abstract: An optical device including a waveguide grating is disclosed. The optical device may be used as an optical cavity for a laser device, for instance, of an integrated laser device for light detection and ranging (Lidar) applications. In one aspect, the optical device includes a waveguide grating for guiding light, a heating layer provided beneath or above the waveguide grating, and two or more contacts for passing a current through the heating layer, to generate heat in the heating layer. The heating layer is thermally coupled to the waveguide grating and is optically decoupled from the waveguide grating.

Abstract: The disclosure relates to a method for processing a laser device, for example a III-V on silicon laser, including: providing a carrier substrate; forming a grating structure on the carrier substrate, wherein the grating structure delimits a cavity on a surface of the carrier substrate; placing a die in the cavity and bonding the die to the carrier substrate, wherein the die comprises an active region including a III-V semiconductor material; transferring the die from the carrier substrate to a silicon substrate by bonding an exposed side of the die to the silicon substrate and subsequently debonding the carrier substrate from the die; and forming a photonic structure, for example a silicon waveguide, coupled to the die.

Abstract: Embodiments are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.

Abstract: Embodiments of the disclosure are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.