Publication number: 20240210821
Abstract: Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula BixOyCz on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula R?Bi(NR2)2 or R?2BiNR2 where R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NR2 is piperidine, and R? includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.
Type:
Application
Filed:
December 22, 2022
Publication date:
June 27, 2024
Applicant:
Intel Corporation
Inventors:
Charles Cameron Mokhtarzadeh, James Blackwell, Scott Semproni, Scott B. Clendenning, Lauren Elizabeth Doyle
Publication number: 20240201586
Abstract: Precursors and methods related to a tin-based photoresist are disclosed herein. In some embodiments, a method for forming a tin-based photoresist may include exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist having tin clusters; selectively exposing the photoresist to extreme ultraviolet radiation (EUV); and exposing the photoresist to heat to form, in the region, crosslinking between the tin clusters. In some embodiments, the precursor has a formula R1R2Sn(N(CH3)2)2, and R1 and R2 are selected from the group consisting of neo-silyl, neo-pentyl, phenyl, benzyl, methyl-bis(trimethylsilyl), methyl, ethyl, isopropyl, tert-butyl, n-butyl, N,N-dimethylpropylamine, and N, N-dimethlybutylamine. In other embodiments, the precursor includes a chelating alkyl-amine or alkyl-amide ligand featuring a 5 membered or 6 membered tin-based heterocycle bound ?2-C,N with an alkyl group on the ligand backbone, wherein the alkyl group includes methyl, ethyl, vinyl, hydrogen, or tert-butyl.
Type:
Application
Filed:
December 20, 2022
Publication date:
June 20, 2024
Applicant:
Intel Corporation
Inventors:
James Blackwell, Charles Cameron Mokhtarzadeh, Lauren Elizabeth Doyle, Eric Mattson, Patrick Theofanis, John J. Plombon, Michael Robinson, Marie Krysak, Paul Meza-Morales, Scott Semproni, Scott B. Clendenning