Patents by Inventor Charles Clausen
Charles Clausen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8101973Abstract: A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the collector, base and emitter layers being npn or pnp doped respectively; characterized in that the lower emitter layer has a larger bandgap than the base layer and is AlxIn1-xP or GaxAl1-xP, x being in the range 0+ to 1.Type: GrantFiled: March 27, 2008Date of Patent: January 24, 2012Assignee: RFMD (UK) LimitedInventors: Matthew Francis O'Keefe, Robert Grey, Michael Charles Clausen, Richard Alun Davies
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Patent number: 8047583Abstract: A handle for use in operating a door of an aircraft. The handle is fixed to a shaft and rotates the shaft about an axis. The handle includes multiple separately movable sections, the sections arranged so that each section has a limited range of movement separate from the other. The handle is capable of operating the door when the sections are moved substantially in unison. The handle also provides positive actuation of movable door components.Type: GrantFiled: October 4, 2007Date of Patent: November 1, 2011Assignee: B/E Aerospace, Inc.Inventor: Charles Clausen
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Patent number: 7868356Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.Type: GrantFiled: April 30, 2009Date of Patent: January 11, 2011Assignee: Filtronic PLCInventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
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Patent number: 7735199Abstract: A hinge assembly for use with a door, in particular, an aircraft door, that enables the door to remain substantially parallel to the fuselage of the aircraft when the door is open and closed. The hinge assembly includes a door support assembly that couples to the door, and a hinge arm assembly. The hinge arm assembly includes a first gear assembly that couples to the fuselage, a second gear assembly that couples the hinge arm assembly to the door support assembly, and a linkage assembly coupled to the first and second gear assemblies. The first and second gear assemblies and linkage assembly cooperate to move the door support assembly and hinge arm assembly with respect to each other.Type: GrantFiled: May 9, 2008Date of Patent: June 15, 2010Assignee: B/E Aerospace, Inc.Inventors: Charles Clausen, Jeff Feathers, Andrew Keleher
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Publication number: 20090261382Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.Type: ApplicationFiled: April 30, 2009Publication date: October 22, 2009Applicant: FILTRONIC PLCInventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
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Patent number: 7538365Abstract: A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.Type: GrantFiled: June 15, 2005Date of Patent: May 26, 2009Assignee: Filtronic PLCInventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey
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Publication number: 20090108133Abstract: A handle for use in operating a door of an aircraft. The handle is fixed to a shaft and rotates the shaft about an axis. The handle includes multiple separately movable sections, the sections arranged so that each section has a limited range of movement separate from the other. The handle is capable of operating the door when the sections are moved substantially in unison. The handle also provides positive actuation of movable door components.Type: ApplicationFiled: October 4, 2007Publication date: April 30, 2009Applicant: B/E Aerospace, Inc.Inventor: Charles Clausen
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Publication number: 20080276428Abstract: A hinge assembly for use with a door, in particular, an aircraft door, that enables the door to remain substantially parallel to the fuselage of the aircraft when the door is open and closed. The hinge assembly includes a door support assembly that couples to the door, and a hinge arm assembly. The hinge arm assembly includes a first gear assembly that couples to the fuselage, a second gear assembly that couples the hinge arm assembly to the door support assembly, and a linkage assembly coupled to the first and second gear assemblies. The first and second gear assemblies and linkage assembly cooperate to move the door support assembly and hinge arm assembly with respect to each other to maintain the door substantially parallel to the aircraft when moving the door toward an open position.Type: ApplicationFiled: May 9, 2008Publication date: November 13, 2008Applicant: B/E Aerospace, Inc.Inventors: Charles Clausen, Jeff Feathers, Andrew Keleher
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Publication number: 20080237643Abstract: A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the collector, base and emitter layers being npn or pnp doped respectively; characterised in that the lower emitter layer has a larger bandgap than the base layer and is AlxIn1-xP or GaxAl1-xP, x being in the range 0+ to 1.Type: ApplicationFiled: March 27, 2008Publication date: October 2, 2008Applicant: FITRONIC COMPOUND SEMICONDUCTORS LIMITEDInventors: Matthew Francis O'Keefe, Robert Grey, Michael Charles Clausen, Richard Alun Davies
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Publication number: 20080153303Abstract: A III-V field effect transistor comprising a semiconductor channel layer having an electrically conducting channel; an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer; the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.Type: ApplicationFiled: March 7, 2008Publication date: June 26, 2008Applicant: FILTRONIC PLCInventors: Matthew Francis O'Keefe, Michael Charles Clausen, Richard Alun Davies, Robert Grey