Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first conductivity type over the substrate, implanting dopants of the first conductivity type into the lower epitaxial layer in an area for a shallow component and blocking the dopants from an area for a deep component, forming a lightly doped upper epitaxial layer over the lower epitaxial layer and activating the implanted dopants to form a heavily doped region. The shallow component is formed over the heavily doped region, and the deep component is formed outside the heavily doped region, extending through the upper epitaxial layer into the lower epitaxial layer.

Abstract: A method of increasing the operating life of a semiconductor device that is to be used in a harsh ionizing radiation environment including determining heating criteria for annealing the device; installing the device in an electronic apparatus; and heating the installed device with a local heating source in accordance with the heating criteria.